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NXP Semiconductors N.V.
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| Part No. |
BTS737-S2
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| OCR Text |
...d a load dump protection 1) v loaddump = v a + v s , v a = 13.5 v r i 2) = 2 ? , t d = 400 ms; in = low or high, each channel loaded with r l = 4.7 ? , v load dump 3 ) 60 v operating temperature range storage... |
| Description |
Transient Voltage Suppressor Diodes .75 - 41V4x35mΩ极限（可控硅）第21A示波 28
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| File Size |
294.58K /
16 Page |
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it Online |
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Infineon
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| Part No. |
BTS432-D2 BTS432-D2E3043 BTS432-D2E3062A
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| OCR Text |
...bb 63 v load dump protection v loaddump = u a + v s , u a = 13.5 v r i = 2 w , r l = 1.1 w , t d = 200 ms, in= low or high v s 3 ) 66.5 v load current (short-circuit current, see page 4) i l self-limited a operating temperatur... |
| Description |
PROFET Smart High Side Power Switch
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| File Size |
200.46K /
14 Page |
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it Online |
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Diodes, Inc.
Diodes Incorporated
Diodes Inc.
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| Part No. |
ZXMS6002GTA ZXMS6002G
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| OCR Text |
...s 550 mj load dump protection v loaddump 80 v electrostatic discharge (human body model) v esd 4000 v din humidity category, din 40 040 e iec climatic category, din iec 68-1 40/150/56 thermal resistance parameter symbol limit unit junction ... |
| Description |
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET
1.6 A, 60 V, 0.675 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA SOT-223, 4 PIN
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| File Size |
645.52K /
10 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
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| Part No. |
BSP452
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| OCR Text |
... j load dump protection 3 ) v loaddump = u a + v s r l = 24 w r i =2 w , t d =400ms, in= low or high, u a =13,5v r l = 80 w (not tested, specified by design) v load dump 4 ) 60 80 v electrostatic discharge capability (es... |
| Description |
MiniPROFET(MiniPROFET模块(高边开)
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| File Size |
89.36K /
8 Page |
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it Online |
Download Datasheet |
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