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  l-mos Datasheet PDF File

For l-mos Found Datasheets File :: 17468    Search Time::0.984ms    
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    SC5399A SC5399B

Silan Microelectronics Joint-stock
Part No. SC5399A SC5399B
OCR Text ...m v c c r e f a g n d d g n d c l k _ o v c o c c 1 c c 0 o p 1 - o u t o p 1 - i n o p 2 - i n o p 2 - o u t l p f 2 - i n l p f 2 - o u t ...mos?devices: electrostatic?charges?can?exist?in?many?things.?all?of?our?mos?devices?are?internally?p...
Description ECHO SOUND EFFECT PROCESSOR

File Size 147.25K  /  7 Page

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    ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. VND670SP VND670SP13TR
OCR Text ...n 36 30 VIN = 3.25 V ILOAD=12A, L=6mH 150 VCC-55 2.5 4.2 Typ 43 45 170 200 VCC-41 5.5 Max 5.5 Unit V V A C V V 3/14 1 VND670SP E...Mos A External Power Mos B (*) Reverse battery protection: - series relay in VCC line: Rgnd=0 ...
Description DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS GATE DRIVER (BRIDGE CONFIGURATION)
DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS GATE DRIVER BRIDGE CONFIGURATION

File Size 219.64K  /  14 Page

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    NJU6379D NJU6379SERIES

New Japan Radio
Part No. NJU6379D NJU6379SERIES
OCR Text ...or open output frequency f 0 l oscillation stop and high impedance output xt xt quartz crystal connecting terminals v ss v ss =0v f out frequency output v dd v dd =2.5v note1) refer to the line-up table. absolute m...
Description 1.8V Operation 3rd. Over Tone Quartz Crystal Oscillator

File Size 34.31K  /  4 Page

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    TOREX[Torex Semiconductor]
Part No. XC9107D XC910607 XC9106D
OCR Text ...haracteristics XC9107D003MR 30 L : 10H VOUT (V) 25 20 15 10 5 0 CIN VIN = 3.3V 0.0 0.5 1.0 Nch Power MOS FET 2SK2159 1.5 2.0 Vref (V) 2.5 3.0 Circuit as left VDD=VIN=3.3V, IOUT=30mA RSENSE : 100m for Ceramic CL SD : MA737 * CFB : 27pF ...
Description PWM Control, PWM/PFM Switching Control, Step-up DC/DC Converters

File Size 77.96K  /  7 Page

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    Advanced Power Technology, Ltd.
Part No. APT5015BVFR APT5015SVFR
OCR Text ... dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current ...mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new tech...
Description POWER MOS V FREDFET 功率MOS V FREDFET

File Size 111.48K  /  4 Page

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    APT8014JFLL

Microsemi Corporation
Part No. APT8014JFLL
OCR Text ... (C/W) 4 Starting Tj = +25C, L = 3.63mH, RG = 25, Peak IL = 42A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID42A di/dt 700A/s VR 800 TJ 150C 6 Eon includes diode reverse recovery. S...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 249.93K  /  5 Page

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    HOKURIKU ELECTRIC INDUSTRY CO.,LTD
Part No. E011300
OCR Text ... ) :? 300 :? 70 -55 c>:? 200 ld l :? 0.1 :? 0.05 mos 1w 9.0 :? 1.0 3.5 :? 1.0 30 :? 3 mos 2w 12.0 :? 1.5 4.0 :? 1.0 38 :? 3 mos 3w 15.0 :? 1.5 5.5 :? 1.0 38 :? 3 model no. dimensions(mm) d 0.6 0.65 :? 0.1 (0.8 :? 0.1) 0.8 :? 0.1 0.8 :? 0.1...
Description Miniature Paint Insulated Metal Oxide Film Fixed Resistors

File Size 73.47K  /  2 Page

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    TPD1008SA07 TPD1008SA

Toshiba Semiconductor
Part No. TPD1008SA07 TPD1008SA
OCR Text ...ter-electromotive force from an L load can be applied. Low on-resistance Low operating current : RDS (ON) = 200m (max) : IDD = 1mA (typ.) (@...MOS structure, this product is sensitive to static electricity. 1 2006-10-31 TPD1008SA Mar...
Description High-side Power Switch for Motors, Solenoids, and Lamp Drivers

File Size 755.45K  /  11 Page

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