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j-300 Datasheet PDF File

For j-300 Found Datasheets File :: 102514 Search Time::1.532ms
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				International Rectifier, Corp.
Part No.	IRF4905 IRF4B905 IRF4905PBF
OCR Text	... A -250 VDS = -44V, VGS = 0V, T J = 150C 100 V GS = 20V nA -100 VGS = -20V 180 ID = -38A 32 nC VDS = -44V 86 V GS = -10V, See Fig. 6 and 13 --- VDD = -28V --- I D = -38A ns --- RG = 2.5 --- RD = 0.72, See Fig. 10 Between lead, --- 6mm (0....
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.67K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305L IRF5305S
OCR Text	...e -to-Source Volta ge (V ) T J , J unc tion T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resista...300 15V 200 Fig 12a. Unclamped Inductive Test Circuit 100 0 V D D = -2 5V 25 50 7...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	...0 s P U LS E W ID TH T c = 2 5C J A 0.1 1 10 100 -4 .5 V 20 s P U L S E W ID T H TC = 17 5C J 0.1 1 10 1 1 A 100 -VD S ...300 200 100 0 V D D = -2 5V 25 50 75 100 125 150 A 175 S tarting T J , J unc tio...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF530A
OCR Text	...4A, VDD=25V, RG=27 , Starting T J =25 oCo 3 _ _ _ O ISD < 14A, di/dt < 350A/s, VDD< BVDSS , Starting T J =25 C _ s, 4 O Pulse Test : Pulse Width = 250 Duty Cycle <2% 5 Essentially Independent of Operating Temperature O N-CHANNEL POWER M...
Description	N-CHANNEL POWER MOSFET Advanced Power MOSFET
File Size	253.11K / 7 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	IRF530FP 5758
OCR Text	...itive (pulse width limited by T j max, < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 25 V) Max Value 16 85...300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area 3/5 IRF530FP TO-220F...
Description	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
File Size	76.48K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF530L IRF530NS IRF530NL
OCR Text	...0V A 250 VDS = 80V, VGS = 0V, T J = 150C 100 VGS = 20V nA -100 VGS = -20V 44 ID = 9.0A 6.2 nC VDS = 80V 21 VGS = 10V, See Fig. 6 and 13 ---...300 B O TTO M 250 ID 3.7 A 6.4A 9 .0 A IAS tp 0.01 200 Fig 12a. Unclamped Inductive...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
File Size	174.65K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	IRF530N
OCR Text	...SISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. SOT78 package, in free air TYP. MAX. UNIT 60 1.9 K/W K/W ELECTRICAL CHARACTERISTICS Tj= 25C...
Description	N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体 N-channel TrenchMOS TM transistor
File Size	95.87K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7106 IRF7106TR
OCR Text	... Electrical Characteristics @ T J = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-...300 -- 280 -- 260 -- 250 -- 62 -- 86 -- Units V V/C V(BR)DSS/TJ Breakdown Voltage Temp. Coeffic...
Description	20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss= -20V)
File Size	157.44K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7807D1
OCR Text	...Current ( A) VGS = 4.5V T J = 25C T J = 150C 1.5 (Normalized) 10 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 1 2.5 VDS = 10V 380s PULSE WIDTH 3.0 3.5 T J , Junction Temperature ( C ) VGS, Gate-to-Sour...
Description	MOSFET / SCHOTTKY DIODE
File Size	162.75K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7807D2
OCR Text	... Current ( ) VGS = 4.5V T J = 25C 1.5 (Normalized) T J = 150C 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 10 2.5 VDS = 10V 380s PULSE WIDTH 3.0 3.5 T J, Junction Temperature (C ) VGS, Gate-to-Source V...
Description	MOSFET / SCHOTTKY DIODE
File Size	131.40K / 8 Page	View it Online	Download Datasheet

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