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  idss-4ma Datasheet PDF File

For idss-4ma Found Datasheets File :: 246    Search Time::1.219ms    
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    EIC1414-8

Excelics Semiconductor, Inc.
Part No. EIC1414-8
OCR Text ...) SYMBOL P1dB G1dB G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.0-14.5GHz VDS = 10 V, IDSQ ...4mA -14.4mA 38.5dBm o 175 C o -65 to +175 C CONTINUOUS2 10V -4V 28.8mA -4.8mA @ 3dB Compression ...
Description 14.0-14.5 GHz 8-Watt Internally Matched Power FET

File Size 74.80K  /  1 Page

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    VIPER53 VIPER53DIP VIPER53SP VIPER53SP13TR

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. VIPER53 VIPER53DIP VIPER53SP VIPER53SP13TR
OCR Text ...ed) POWER SECTION Symbol BVDSS IDSS RDS(on) Parameter Drain-Source Voltage Off State Drain Current Static Drain-Source On State Resistance ...4mA; VDD=16V ICOMP=0.4mA; VDD=14V VCOMP=2.5V; VDD=16V VCOMP=2.5V; VDD=14V (See figure 10) (See figur...
Description OFF LINE PRIMARY SWITCH

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    RFD14N05 RFD14N05SM RFP14N05 RFD14N05SM9A

FAIRCHILD[Fairchild Semiconductor]
Part No. RFD14N05 RFD14N05SM RFP14N05 RFD14N05SM9A
OCR Text ...pecified SYMBOL BV DSS V GS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V (Figure 9) V GS = VDS, ID = 250A V DS = Rated BVDSS , VG S = 0V V D...4mA (Figure 13) TO-251 and TO-252 TO-220 TYP 14 26 45 17 570 185 50 MAX 4 25 250 100 0.100 60 100 40...
Description 14A/ 50V/ 0.100 Ohm/ N-Channel Power MOSFETs
14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

File Size 152.62K  /  8 Page

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    Intersil
Part No. RFP14N05 RFD14N05SM RFD14N05 FN2268
OCR Text ... Specified SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(10) Qg(TH) CISS COSS CRSS RJC RJA RJA TO-251 and ...4mA (Figure 13) TEST CONDITIONS ID = 250A, VGS = 0V (Figure 9) VGS = VDS, ID = 250A VDS = Rated BVDS...
Description 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs
From old datasheet system

File Size 74.21K  /  8 Page

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    IXYS[IXYS Corporation]
IXYS, Corp.
Part No. IXFK90N20Q IXFH90N20Q IXFX90N20Q
OCR Text ... 2 mA 22 m VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 4mA VDS = VGS, ID = 4mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 TJ = 125C (c) 2000 IXYS All rights reserved 98676A (03/24/00) IXFK 90...
Description    HiPerFETTM Power MOSFETs Q-CLASS
HiPerFETTM Power MOSFETs Q-CLASS 90 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA

File Size 99.06K  /  2 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. RFD14N05SM9A RFD14N05 RFD14N05SM
OCR Text ... Specified SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(10) Qg(TH) CISS COSS CRSS RJC RJA VGS = 0V to 20V...4mA (Figure 13) TEST CONDITIONS ID = 250A, VGS = 0V (Figure 9) VGS = VDS, ID = 250A VDS = Rated BVDS...
Description    14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

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    VIPER53SP-E VIPER53SPTR-E VIPER53-E VIPER53DIP-E

STMicroelectronics
Part No. VIPER53SP-E VIPER53SPTR-E VIPER53-E VIPER53DIP-E
OCR Text ...pecified Table 3. Symbol BVDSS IDSS Power section Parameter Test conditions Min. 620 150 Typ. Max. Unit V A Drain-source voltage ID ...4mA; VDD = 16V ICOMP = 0.4mA; VDD=14V(1) VCOMP = 2.5V; VDD = 16V Figure 11. on page 11 VCOMP = 2.5V;...
Description OFF-line primary switch

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    SLA5023

SANKEN[Sanken electric]
Part No. SLA5023
OCR Text ...l MOSFET) Symbol V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss ton toff VSD trr Specification min typ max 100 500 250 1.0 2.0 1.1 1.7 0....4mA -2m A hFE-IC Characteristics (Typical) 20000 10000 typ hFE-IC Temperature Characteristi...
Description PNP Darlington N-channel MOSFET 3-phase motor drive

File Size 34.69K  /  2 Page

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    EIA1818-1P EIB1818-1P

Excelics Semiconductor, Inc.
Part No. EIA1818-1P EIB1818-1P
OCR Text ...18.15-18.75GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1dB Compression f=18.15-18.75GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Po...4mA Thermal Resistance (Au-Sn Eutectic Attach) *Typical -45dBc IM3 at Pout=20dBm/Tone MAXIMUM ...
Description 18.15-18.75GHz, 1W Internally Matched Power FET

File Size 41.62K  /  1 Page

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    EIA1819-1P EIB1819-1P

Excelics Semiconductor, Inc.
Part No. EIA1819-1P EIB1819-1P
OCR Text ...f=18.7-19.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1dB Compression f=18.7-19.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Powe...4mA Thermal Resistance (Au-Sn Eutectic Attach) *Typical -45dBc IM3 at Pout=20dBm/Tone MAXIMUM ...
Description 18.7-19.7GHz, 1W Internally Matched Power FET

File Size 41.64K  /  1 Page

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For idss-4ma Found Datasheets File :: 246    Search Time::1.219ms    
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