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SIEMENS[Siemens Semiconductor Group]
Infineon
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| Part No. |
BUZ70L C67078-S1325-A2
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| OCR Text |
...t Symbol Values 12 Unit A
ID idpuls
48
TC = 33 C
Pulsed drain current
TC = 25 C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
12 1 mJ
ID = 12 A,... |
| Description |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) SIPMOS功率晶体管（N通道增强模式雪崩级逻辑电平
From old datasheet system
SIPMOS ? Power Transistor
N-Channel SIPMOS Power Transistor
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| File Size |
194.09K /
9 Page |
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SIEMENS[Siemens Semiconductor Group]
Infineon
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| Part No. |
SN7002 Q67000-S063
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| OCR Text |
... C
DC drain current, pulsed
idpuls
0.76
TA = 25 C
Power dissipation
Ptot
0.36
W
TA = 25 C
Semiconductor Group
1
Sep-13-1996
SN 7002
Maximum Ratings Parameter Chip or operating temperature Storage temperatur... |
| Description |
SIPMOS Small-Signal Transistor
From old datasheet system
SIPMOS ? Small-Signal Transistor
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| File Size |
133.31K /
8 Page |
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it Online |
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BUZ325 C67078-S3118-A2
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| OCR Text |
...Symbol Values 12.5 Unit A
ID idpuls
50
TC = 27 C
Pulsed drain current
TC = 25 C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
12.5 13 mJ
ID = 12... |
| Description |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) 12.5 A, 400 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218
From old datasheet system
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| File Size |
226.67K /
9 Page |
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it Online |
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BUZ342 C67078-S3135-A2
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| OCR Text |
...t Symbol Values 60 Unit A
ID idpuls
240
TC = 150 C
Pulsed drain current
TC = 25 C
Avalanche energy, single pulse
EAS
460 dv/dt
mJ
ID = 60 A, VDD = 25 V, RGS = 25 L = 128 H, Tj = 25 C
Reverse diode dv/dt kV/s
IS = ... |
| Description |
20 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 60 A, 50 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Ultra low on-resistance) SIPMOS功率晶体管（N通道增强模式雪崩级的dv /额定的胸苷超低电阻）
From old datasheet system
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| File Size |
214.37K /
9 Page |
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it Online |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BSP298 Q67000-S200
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| OCR Text |
... Symbol Values 0.5 Unit A
ID idpuls
2
TA = 26 C
DC drain current, pulsed
TA = 25 C
Avalanche energy, single pulse
EAS
130
mJ
ID = 1.35 A, VDD = 50 V, RGS = 25 L = 125 mH, Tj = 25 C
Gate source voltage Power dissipati... |
| Description |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) SIPMOS小信号晶体管（N通道增强模式雪崩额定
SIPMOS ? Small-Signal Transistor
From old datasheet system
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| File Size |
168.75K /
9 Page |
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it Online |
Download Datasheet |
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