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  id-6.4a Datasheet PDF File

For id-6.4a Found Datasheets File :: 3780    Search Time::1.39ms    
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    MRF141

MOTOROLA[Motorola, Inc]
Part No. MRF141
OCR Text ...emperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 65 65 40 16 300 1.71 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C THERMAL CHA...6 Unit C/W NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Re...
Description N-CHANNEL BROADBAND RF POWER MOSFET

File Size 159.11K  /  8 Page

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    MRF151G

MOTOROLA[Motorola, Inc]
Part No. MRF151G
OCR Text ...emperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 125 125 40 40 500 2.85 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C THERMAL C...6 V - L1 R2 C1 INPUT D.U.T. T2 C12 T1 OUTPUT C4 C5 C9 C10 C11 Gps No Degradation in Output Power 1...
Description N-CHANNEL BROADBAND RF POWER MOSFET

File Size 155.18K  /  6 Page

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    MRF151

MOTOROLA[Motorola, Inc]
Part No. MRF151
OCR Text ...emperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 125 125 40 16 300 1.71 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C THERMAL C...6 Unit C/W NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Re...
Description N-CHANNEL BROADBAND RF POWER MOSFET

File Size 182.89K  /  8 Page

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    MRF157

MOTOROLA[Motorola, Inc]
Part No. MRF157
OCR Text ...emperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 125 125 40 60 1350 7.7 - 65 to + 150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C THERMAL ...6 V + - R1 C5 C6 R2 L1 C1 C2 C3 C7 C9 T1 D.U.T. C14 L2 C15 C16 C17 C18 L3 C19 C20 C21 + + 5...
Description MOS LINEAR RF POWER FET

File Size 178.94K  /  8 Page

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    RFK25N20 RFK25N18

INTERSIL[Intersil Corporation]
Part No. RFK25N20 RFK25N18
OCR Text .... . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM G...6, 7) ID = 25A, VGS = 10V ID 12.5A, VDD = 100V, RG = 50 , V = 10V GS RL = 8 , (Figures 10, 11, 12) ...
Description 25A/ 180V and 200V/ 0.150 Ohm/ N-Channel Power MOSFETs
25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs
25A 180V and 200V 0.150 Ohm N-Channel Power MOSFETs

File Size 42.17K  /  5 Page

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    SQ701

POLYFET[Polyfet RF Devices]
Part No. SQ701
OCR Text ... IV CURVE S1A 1 DIE IV 8 7 6 ID IN AMPS 5 4 3 2 1 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 VDS Vg=6vINVOLTS vg=8v 14 0 16 18 vg=12v 20 ID & GM VS VGS 10.00 S1A 1 DIE ID & GM Vs VG Id Id in amps; Gm in mhos 1.00 gM 0.10 0 2...
Description SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

File Size 34.28K  /  2 Page

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    SSF45N20B

FAIRCHILD[Fairchild Semiconductor]
Part No. SSF45N20B
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Vo...6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : 10 2 10 1 10 1 150 C 25 C -55 C o o ...
Description 200V N-Channel MOSFET

File Size 672.31K  /  8 Page

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    FDW2502PZ

FAIRCHILD[Fairchild Semiconductor]
Part No. FDW2502PZ
OCR Text ...um Ratings Symbol V DSS V GSS ID PD TJ , TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A=25oC unl...6 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Stor...
Description Dual P-Channel 2.5V Specified PowerTrench MOSFET

File Size 86.05K  /  6 Page

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    FDW2502 FDW2502P

FAIRCHILD[Fairchild Semiconductor]
Part No. FDW2502 FDW2502P
OCR Text ...imum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA =25 oC unl...6 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Stor...
Description    Dual P-Channel 2.5V Specified PowerTrench MOSFET

File Size 449.42K  /  6 Page

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    FRX130D FRX130D1 FRX130D3 FRX130H FRX130H4 FRX130R FRX130R1 FRX130R3 FRX130R4 FN3144

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FRX130D FRX130D1 FRX130D3 FRX130H FRX130H4 FRX130R FRX130R1 FRX130R3 FRX130R4 FN3144
OCR Text .... . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...6 TYP MAX 4.0 100 100 1 0.025 0.25 18 1.130 0.180 30 100 ns 200 100 4 70 128 12 14 nc 32 1.8 400 11 ...
Description Radiation Hardened N-Channel Power MOSFETs 6 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system

File Size 34.94K  /  5 Page

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