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  id-1.6a Datasheet PDF File

For id-1.6a Found Datasheets File :: 4043    Search Time::6.484ms    
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    SPD07N60S5 SPU07N60S5

INFINEON[Infineon Technologies AG]
Part No. SPD07N60S5 SPU07N60S5
OCR Text ...O-251 and TO-252 VDS RDS(on) ID P-TO252. 2 3 1 600 0.6 7.3 P-TO251. V A * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance 1 2 3 ...
Description for lowest Conduction Losses
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor

File Size 259.07K  /  11 Page

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    2SK2099-01L 2SK2099-01S

Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
Part No. 2SK2099-01L 2SK2099-01S
OCR Text ...erature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 250 250 6 24 30 20 150 -55 ~ +150 Unit V V A A V W C C > Equivalen...1,0 100 0,85 600 110 30 30 30 60 15 6 24 1,5 1,5 6 IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -d...
Description N-channel MOS-FET 6 A, 250 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 214.11K  /  2 Page

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    BUZ906P BUZ905P

Magnatec
ETC[ETC]
List of Unclassifed Manufacturers
Part No. BUZ906P BUZ905P
OCR Text ...DSX Drain - Source Voltage VGSS ID ID(PK) PD Tstg Tj RJC Gate - Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipa...1.0C/W BUZ906P -200V Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. ...
Description P-CHANNEL POWER MOSFET

File Size 37.00K  /  3 Page

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    FDFS6N303

FAIRCHILD[Fairchild Semiconductor]
Part No. FDFS6N303
OCR Text ...d FDFS6N303 Units VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for ...1.6 0.9 -55 to 150 V V A W TJ,TSTG Operating and Storage Temperature Range TA = 25oC unl...
Description N-Channel MOSFET with Schottky Diode

File Size 94.24K  /  5 Page

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    FQA13N80

FAIRCHILD[Fairchild Semiconductor]
Part No. FQA13N80
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Vo...1) FQA13N80 800 12.6 8.0 50.4 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ...
Description 800V N-Channel MOSFET

File Size 730.26K  /  8 Page

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    FQAF13N80

FAIRCHILD[Fairchild Semiconductor]
Part No. FQAF13N80
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Vo...1) FQAF13N80 800 8.0 5.1 32 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V...
Description 800V N-Channel MOSFET

File Size 714.82K  /  8 Page

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    HBCC-1590 HBCC-1570 HBCC-1580

Molex, Inc.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. HBCC-1590 HBCC-1570 HBCC-1580
OCR Text ...CC-1580 Symbol Ipr <Q> Z Vf BVR Id Cd Ke d 0.82 4.11 (0.162) 1.5 5.0 - - - - - Min. Typ. (see Bin Table) 0.95 4.27 (0.168) 1.75 - 60 100 60 650 -0.006 0.268 (0.0106) 1.0 4.42 (0.174) 2.0 - 1000 - - 670 - - Max. Units nA - mm (in.) V V pA p...
Description Optical Reflective Sensors 光反射传感器
50/125 PVC MTRJ-SC 2M DUPLEX ASSEM

File Size 144.93K  /  8 Page

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    IRF640N IRF640NL IRF640NS

IRF[International Rectifier]
Part No. IRF640N IRF640NL IRF640NS
OCR Text ...= 200V RDS(on) = 0.15 G S ID = 18A TO-220AB IRF640N D2Pak IRF640NS TO-262 IRF640NL Absolute Maximum Ratings ID @ TC = 25C...1.0 20 247 18 15 8.1 -55 to +175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A...
Description Power MOSFET(Vdss=200V/ Rds(on)=0.15ohm/ Id=18A)
Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

File Size 153.14K  /  11 Page

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    MCH3408

Sanyo Semicon Device
Part No. MCH3408
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) Conditions 0.85 1 : Gate 2 : Source 3 : Drain 2 1 SANYO : MCPH3 Ratings 30 20 1.4 5.6 0.8 150 --55 to +150 U...
Description N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications

File Size 27.11K  /  4 Page

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    FDW2501NZ

FAIRCHILD[Fairchild Semiconductor]
Part No. FDW2501NZ
OCR Text ...um Ratings Symbol V DSS V GSS ID PD TJ , TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipati...1.0 0.6 -55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Th...
Description Dual N-Channel 2.5V Specified PowerTrench MOSFET

File Size 91.09K  /  6 Page

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