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INTERSIL[Intersil Corporation]
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| Part No. |
HUF75639S3S HUF75639G3 HUF75639P3
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| OCR Text |
.... . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... |
| Description |
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs 56A/ 100V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFETs
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| File Size |
367.77K /
9 Page |
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it Online |
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SemeLAB SEME-LAB[Seme LAB]
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| Part No. |
IRFN240SMD
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| OCR Text |
....7 6 (0 .0 3 0 ) m in .
VDSS ID(cont) RDS(on)
FEATURES
200V 13.9A W 0.180W
1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
2
1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 )
* HERMETICALLY SEALED SURFACE MOUNT PACKAGE * SMALL FOOTPRIN... |
| Description |
N-CHANNEL POWER MOSFET
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| File Size |
23.32K /
2 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
IRFWI510A
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| OCR Text |
...A
BVDSS = 100 V RDS(on) = 0.4 ID = 5.6 A
D2-PAK
2
I2-PAK
1 1 3 2 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Curr... |
| Description |
Advanced Power MOSFET
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| File Size |
251.93K /
7 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHLNA77064 IRHLNA73064
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| OCR Text |
...K Rads (Si) RDS(on) 0.012 0.012 ID 56A* 56A*
IRHLNA77064 60V, N-CHANNEL
TECHNOLOGY
SMD-2
International Rectifier's R7 TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devic... |
| Description |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)
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| File Size |
196.90K /
9 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHNA597Z60 IRHNA593Z60
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| OCR Text |
...RHNA593Z60 300K Rads (Si) 0.013 ID -56A* -56A*
IRHNA597Z60 30V, P-CHANNEL
5
TECHNOLOGY
SMD-2
International Rectifier's R5 technology provides high performance power MOSFETs for space applications. These devices have been ch... |
| Description |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
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| File Size |
192.52K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRL3103SPBF IRL3103LPBF
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| OCR Text |
... S
Absolute Maximum Ratings
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG
The D2Pak is a surface mount powe...0.63 16 34 22 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V A mJ V... |
| Description |
HEXFET? Power MOSFET HEXFET㈢ Power MOSFET
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| File Size |
642.43K /
10 Page |
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it Online |
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NTE Electronics, Inc. NTE[NTE Electronics]
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| Part No. |
NTE66
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| OCR Text |
.... 20V Continuous Drain Current, ID TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....0.62W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . .... |
| Description |
MOSFET N-Ch, Enhancement Mode High Speed Switch
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| File Size |
26.14K /
3 Page |
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it Online |
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SEME-LAB[Seme LAB]
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| Part No. |
SML20S56 SML10S75
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| OCR Text |
...) 2.84 (0.112)
VDSS 200V 56A ID(cont) W RDS(on) 0.045W
Pin 3 - Source
Pin 1 - Gate
Pin 2 - Drain Heatsink is Drain.
* * * *
Faster Switching Lower Leakage 100% Avalanche Tested Surface Mount D3PAK Package
D
StarMOS is a ... |
| Description |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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| File Size |
20.53K /
2 Page |
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it Online |
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VISAY[Vishay Siliconix]
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| Part No. |
VN2001L-TR1 VN2001L
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| OCR Text |
...@ VGS = 10 V 1.3 @ VGS = 6 V
ID (A)
0.56 0.54
D TrenchFETr Power MOSFET
APPLICATIONS
D CRT Monitor HD Drive Circuit D H-Drive Trans Switching
TO-226AA (TO-92)
S 1 Device Marking Front View "S" VN 2001L xxyy "S" = Siliconix Lo... |
| Description |
N-Channel 200-V (D-S) MOSFET
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| File Size |
66.27K /
4 Page |
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it Online |
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Price and Availability
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