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  fet2-18 Datasheet PDF File

For fet2-18 Found Datasheets File :: 105    Search Time::6.922ms    
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    UPA2451 UPA2451TL UPA2451TL-E1

NEC
Part No. UPA2451 UPA2451TL UPA2451TL-E1
OCR Text ...0.1 Single Pulse PD (FET1):PD (FET2) =1:1 0 0 30 60 120 90 TA - Ambient Temperature - C 150 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 100 10 Pulsed VDS = 10 V TA = 125...
Description Nch enhancement-type MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

File Size 73.88K  /  8 Page

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    FW213

Sanyo Semicon Device
Part No. FW213
OCR Text ...llowable Power Dissipation, PD (FET2) - W 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Drain-to-Source Voltage, VDS - V 2.5 P D (FET2) - P D (FET1) M ou P D - Ta nte Allowable Power D...
Description    DC-DC Converter Applications

File Size 43.89K  /  4 Page

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    EFC4602 ENA1048

Sanyo Semicon Device
Part No. EFC4602 ENA1048
OCR Text ...sely if you want to measure the FET2 side. No. A1048-3/6 EFC4602 Test Circuit 8 Ciss S2 G2 Coss S2 G2 Capacitance bridge ...18 20 VGS -- Qg Source-to-Source Voltage, VSS -- V IT13281 ASO Gate-to-Source Volt...
Description N-Channel Silicon MOSFET General-Purpose Switching Device Applications

File Size 69.85K  /  6 Page

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    UPA1855 UPA1855GR-9JG

NEC
Part No. UPA1855 UPA1855GR-9JG
OCR Text ...d of 50cm x 1.1mm PD(FET1) : PD(FET2) = 1:1 1 10 100 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 25 VGS = 4.5 V VGS = 4.0 V ID - Drain Current - A TRANSFER CHARACTERISTICS 100 10 ID - Drai...
Description Nch enhancement type MOS FET
MOS FIELD EFFECT TRANSISTOR

File Size 65.94K  /  8 Page

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    EUP9232ACQIR1 EUP9232ABQIR1 EUP9232AAQIR1 EUP9232AGQIR1 EUP9232 EUP9232ADQIR1 EUP9232AEQIR1 EUP9232AFQIR1 EUP9232AHQIR1

Eutech Microelectronics Inc
Part No. EUP9232ACQIR1 EUP9232ABQIR1 EUP9232AAQIR1 EUP9232AGQIR1 EUP9232 EUP9232ADQIR1 EUP9232AEQIR1 EUP9232AFQIR1 EUP9232AHQIR1
OCR Text ...rcuit Figure2. Symbol FET1 FET2 R1 C1 R2 C2 R4 C3 R3 Parts Nch MOSFET Nch MOS FET Chip resistor Chip capacitor Chip resistor Chip c...18 EUP9232 3. Overcurrent Detection Figure20. *1. <1> Normal mode. <2> Over charge mode.<3> ...
Description LI-ION/POLYMER TWO CELL PROTECTOR

File Size 542.85K  /  20 Page

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    FW113

SANYO[Sanyo Semicon Device]
Part No. FW113
OCR Text ...e Voltage, VDS - V 2.5 P D (FET2) - P D (FET1) Allowable Dissipation, PD - W M P D - Ta Allowable Dissipation, PD(FET 2) - W 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0 ou nte ...
Description P-Channel Silicon MOS FET S/W Load Applications

File Size 44.38K  /  3 Page

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    NUD4301 NUD4301MNT1G

ON Semiconductor
Part No. NUD4301 NUD4301MNT1G
OCR Text ...urrent Limit FET1 Current Limit FET2 For information on tape and reel specifications, including part orientation and tape sizes, please 8...18 20 22 mA Vdrop RDSon IDSS VBRDSS - - 7.0 - - 5.0 1.0 - TBD - - - - - 200 W mA V pF mV Symbol Min ...
Description Dual Low Dropout Voltage LED Driver/Current Source

File Size 64.45K  /  6 Page

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    UPA1890 UPA1890GR-9JG

NEC, Corp.
NEC[NEC]
Part No. UPA1890 UPA1890GR-9JG
OCR Text ...00 mm2x 1.1 mm 0.01 PD(FET1):PD(FET2) = 1:1 0 30 60 90 120 TA - Ambient Temperature - C 150 0.1 1 10 100 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 25 Pulsed VGS = 10 V TRANSFER...
Description N- AND P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING NP沟道MOS场效应晶体管开

File Size 93.52K  /  12 Page

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    FTD2019A

Sanyo Semicon Device
Part No. FTD2019A
OCR Text ... Allowable Power Dissipation (FET2), PD -- W Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and a...
Description N-Channel Silicon MOSFET Transistor Load Switching Applications

File Size 34.96K  /  4 Page

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