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  fe-100 Datasheet PDF File

For fe-100 Found Datasheets File :: 20621    Search Time::7.125ms    
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    Fairchild Semiconductor, Corp.
Part No. KSA910YSHTA
OCR Text ...5 c unless otherwise noted h fe classification symbol parameter ratings units v cbo collector-base voltage -150 v v ceo collector-emitte...100 a, i e =0 -150 v bv ceo collector-emitter breakdown voltage i c = -5ma, i b =0 -150 v bv ebo em...
Description PNP Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Ammo 50 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR

File Size 64.98K  /  5 Page

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    Fairchild Semiconductor, Corp.
Part No. KSA812GAMTF
OCR Text ... c unless otherwise noted h fe classification symbol parameter ratings units v cbo collector-base voltage -60 v v ceo collector-emitter...100 ma p c collector power dissipation 150 mw t j junction temperature 150 c t stg storage temperat...
Description PNP Epitaxial Silicon Transistor; Package: SOT-23; No of Pins: 3; Container: Tape &amp; Reel 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR

File Size 84.76K  /  5 Page

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    Fairchild Semiconductor, Corp.
Part No. KSA733YIUTA KSA733CGBU KSA733CGBUNL
OCR Text ... c unless otherwise noted h fe classification symbol parameter ratings units v cbo collector-base voltage -60 v v ceo collector-emitt...100 a, i e =0 -60 v bv ceo collector-emitter breakdown voltage i c = -10ma. i b =0 -50 v bv ebo e...
Description PNP Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Ammo 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Bulk 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP Epitaxial Silicon Transistor 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

File Size 76.28K  /  6 Page

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    Fairchild Semiconductor, Corp.
Part No. KSA708CYBU KSA708CYTA
OCR Text ...t: pw 350 s, duty cycle 2% h fe classification symbol parameter ratings units v cbo collector-base voltage -80 v v ceo collector-emitter...100 a, i e =0 -80 v bv ceo collector-emitter breakdown voltage i c = -10ma, i b =0 -60 v bv ebo emi...
Description PNP Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Bulk 700 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Ammo 700 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

File Size 66.05K  /  5 Page

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    BCX53-10

INFINEON TECHNOLOGIES AG
Part No. BCX53-10
OCR Text ... i c = 500 ma, v ce = 2 v h fe 25 40 63 100 25 - - 100 160 - - 250 160 250 - - collector-emitter saturation voltage 1) i c = 500 ma, i b = 50 ma v cesat - - 0.5 v base-emitter voltage 1) i c = 500 ma, v ce = 2 v v be(on)...
Description 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR

File Size 513.80K  /  8 Page

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    PBHV9040T

NXP Semiconductors
Part No. PBHV9040T
OCR Text ... high collector current gain (h fe ) at high i c n aec-q101 quali?ed 1.3 applications n electronic ballast for ?uorescent lighting n led dri...100 200 - pbhv9040t_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 13 febru...
Description 0.25A PNP high-voltage low VCEsat (BISS) transistor

File Size 148.07K  /  12 Page

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    2SC2412KQKT1 2SC2412KRLT1 2SC2412KSLT1 2SC2412

Leshan Radio Company, Ltd.
Part No. 2SC2412KQKT1 2SC2412KRLT1 2SC2412KSLT1 2SC2412
OCR Text ...)CBO I CBO I EBO V CE(sat) h FE fT C ob h FE values are classified as follows: hFE * Q 120~270 R 180~390 S 270~560 M36...100 0.50mA T A = 25C VCE= 6 V 20 I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (m...
Description General Purpose Transistors(NPN Silicon) 通用晶体管(NPN硅)

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    ZXTN4004Z-15

Diodes Incorporated
Part No. ZXTN4004Z-15
OCR Text ...igh continuous current ? h fe > 100 for i c = 150ma, v ce = 0.25 v ? totally lead - free & fully rohs c ompliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standard...
Description 150V NPN LED DRIVING TRANSISTOR IN SOT89

File Size 361.49K  /  6 Page

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    KSC5502DTM

Fairchild Semiconductor
Part No. KSC5502DTM
OCR Text ... =12v, i c =0 t c =25 c10 a h fe dc current gain v ce =1v, i c =0.2a t c =25 c152840 t c =125 c8 18 v ce =1v, i c =1a t c =25 c46.4 t c...100 pf f t current gain bandwidth product i c =0.5a,v ce =10v 11 mhz v f diode forward voltage i f =...
Description High Voltage Power Switch Switching Application
   High Voltage Power Switch Switching Application

File Size 440.89K  /  11 Page

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    Central Semiconductor, Corp.
Part No. CTLM7410-M832D
OCR Text ...) v ce =1.0v, i c =10ma 0.9 v h fe v ce =1.0v, i c =10ma 100 h fe v ce =1.0v, i c =100ma 100 300 h fe v ce =1.0v, i c =500ma 100 h fe v ce =1.0v, i c =1.0a 50 f t v ce =10v, i c =50ma, f=100mhz 100 mhz c ob v cb =10v, i e =0, f=1.0mhz (ctlm...
Description 1 A, 25 V, 2 CHANNEL, PNP, Si, POWER TRANSISTOR 3 X 2 MM, LEADLESS PACKAGE-10

File Size 227.35K  /  2 Page

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