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TOSHIBA
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| Part No. |
CRS04
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| OCR Text |
... average forward current: i f (av) = 1.0 a repetitive peak reverse voltage: v rrm = 40 v suitable for compact assembly due to ...glass-epoxy board (board size: 50 mm 50 mm, land size: 6 mm 6 mm) electrical character... |
| Description |
Schottky Barrier Rectifier Trench Schottky Barrier Type Switching Mode Power Supply Applications Portable Equipment Battery Applications
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| File Size |
171.30K /
5 Page |
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it Online |
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TOSHIBA
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| Part No. |
CUS02
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| OCR Text |
...RM = 5 V VRRM = 30 V VR = 10 V, f = 1.0 MHz Device mounted on a ceramic board (soldering land: 2 mm x 2 mm) Rth (j-a) Device mounted on a glass-epoxy board (soldering land: 6 mm x 6 mm) Junction to lead of cathode side Test Condition Min ... |
| Description |
Schottky Barrier Rectifier Schottky Barrier Type Switching Mode Power Supply Applications Portable Equipment Battery Applications
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| File Size |
125.84K /
5 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
CUS01
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| OCR Text |
...RM = 5 V VRRM = 30 V VR = 10 V, f = 1.0 MHz Device mounted on a ceramic board (soldering land: 2 mm x 2 mm) Rth (j-a) Device mounted on a glass-epoxy board (soldering land: 6 mm x 6 mm) Junction to lead of cathode side Test Condition Min ... |
| Description |
Schottky Barrier Rectifier Schottky Barrier Type Portable Equipment Battery Application
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| File Size |
120.34K /
5 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
1N4747A 1N4741A 1N4749AT/R 1N4737A
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| OCR Text |
...r conditions min typ max unit v f forward voltage i f = 200 ma - - 1.2 v p tot total power dissipation - - 1000 mw table 2. pinning pin desc...glass package; axial leaded; 2 leads sod66 table 4. marking codes type number marking code 1n4728a t... |
| Description |
Voltage regulator diodes
24 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
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| File Size |
47.07K /
10 Page |
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it Online |
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VISHAY SEMICONDUCTORS
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| Part No. |
GP15M/54 GP15M/58 GP15B-HE3
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| OCR Text |
... ratings and characteristics i f(av) 1.5 a v rrm 50 v to 1000 v i fsm 50 a i r 5.0 a v f 1.1 v t j max. 175 c features superectifier struct ure for high reliability application cavity-free glass-passivated junction low forward vo... |
| Description |
1.5 A, 1000 V, SILICON, RECTIfIER DIODE, DO-204AC
DIODE 1.5 A, 100 V, SILICON, RECTIfIER DIODE, DO-204AC, LEAD fREE, PLASTIC, DO-15, 2 PIN, Rectifier Diode
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| File Size |
330.76K /
4 Page |
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it Online |
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Vishay
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| Part No. |
BY228-13 BY228-15
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| OCR Text |
...
I R - Reverse Current ( A ) I f - forward Current (A)
1000 V R = VRRM
100
10
0.001 0.0
16402
1 0.5 1.0 1.5 2.0 2.5 3.0
16...glass Case SOD-64 Cathode Identification 4.3 (0.168) max.
ISO Method E
1.35 (0.053) max.
26(1... |
| Description |
Diodes
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| File Size |
125.51K /
4 Page |
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Sharp Electrionic
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| Part No. |
GP2S60
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| OCR Text |
...t collector power dissipation i f v r p d v ceo v eco i c p c t stg t opr p tot (t a = 25?c) soldering temperature t sol * * for max. 5s tot...glass fig.11 measuring configulation of collector current fig.12 spectral sensitivity l al evapora... |
| Description |
Subminiature / Reflective Type Photointerrupter
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| File Size |
111.28K /
6 Page |
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it Online |
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VISHAY SEMICONDUCTORS
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| Part No. |
GP30ME3
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| OCR Text |
... ratings and characteristics i f(av) 3.0 a v rrm 50 v to 1000 v i fsm 125 a i r 5.0 a v f 1.2 v, 1.1 v t j max. 175 c features superect...glass-passivated junction low leakage current, typical i r less than 0.1a low forward voltage... |
| Description |
3 A, 1000 V, SILICON, RECTIfIER DIODE, DO-201AD
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| File Size |
290.33K /
4 Page |
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it Online |
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Price and Availability
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