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  epitaxy Datasheet PDF File

For epitaxy Found Datasheets File :: 119    Search Time::1.516ms    
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    Rohm Co., Ltd.
Part No. RLD-78NZ-C3
OCR Text ... manufactured by molecular beam epitaxy. The characteristics of this laser diode are suitable for high-speed laser printers. 0.40.1 1.0Min. !Applications Laser printers High-speed laser printers !External dimensions (Units : mm)...
Description Laser Diodes 激光二极管

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    Rohm CO.,LTD.
Part No. RLD-78PIT RLD-78MIT RLD-78NIT
OCR Text ... manufactured by molecular beam epitaxy. Modal noise is controlled by relaxation oscillation, and they are ideal for short-distance, high-speed optical communications. FApplications Short-distance optical communications FFeatures 1) High os...
Description AlGaAs Laser Diodes(铝砷化镓激光二极管)

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    KVX2162 KVX2301 KVX2201-23-4 KVX3201A-23-3 KVX3201A-23-5 KVX3901A-23-4 KVX2122 KVX2001

Microsemi Corporation
MICROSEMI CORP-LOWELL
Part No. KVX2162 KVX2301 KVX2201-23-4 KVX3201A-23-3 KVX3201A-23-5 KVX3901A-23-4 KVX2122 KVX2001
OCR Text ...implantation and grown junction epitaxy to provide highly repeatable c / v functions and the highest q values available in the industry. the economical sot-23 package allows these devices to be used in a wide range of vhf-uhf and wireles...
Description SURFACE MOUNT VARACTOR DIODES Wide Bandwidth SOT-23 Hyperabrupt TM
L BAND, 50 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L BAND, 12 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L BAND, 29 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

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    GMV7811-000

Skyworks Solutions Inc.
Part No. GMV7811-000
OCR Text ...re grown by mbe (molecular beam epitaxy), which allows monolayer control of the doping profile. this translates to superb wafer- to-wafer uniformity. the series resistance is lower, and q is higher when compared to an equivalent silicon hyp...
Description GaAs Chip and Flip Chip Varactors
Hook-Up Wire; Conductor Size AWG:30; No. Strands x Strand Size:7 x 28; Jacket Color:White; Approval Bodies:UL; Approval Categories:UL AWM Style 1371; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/6 Type ET RoHS Compliant: Yes

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    California Eastern Laboratories
Part No. GET-30704
OCR Text ... grown by vpe(vapour phased epitaxy). (2) oxide isolation to reduce parasitic capacitance. (3) a shallow and higher impurity doped base by ion implantation. a shallow emitter by diffusion from as-doped polysilicon...
Description Qualification Test Results on Si MMIC

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    LSC2617 LSC2615 LSC2604 LSC2613 LSC2606 LSC2610 LSC2614 LSC2616 LSC2620 LSC2603 LSC2609 LSC2612 LSC2605 LSC2608 LSC2602

Agilent(Hewlett-Packard)
Part No. LSC2617 LSC2615 LSC2604 LSC2613 LSC2606 LSC2610 LSC2614 LSC2616 LSC2620 LSC2603 LSC2609 LSC2612 LSC2605 LSC2608 LSC2602 LSC2607 LSC2618 LSC2625 LSC2619 LSC2624
OCR Text ...y the metal organic vapor phase epitaxy (movpe) process, resulting in long lifetimes and modest threshold currents. the lsc26xx package includes a photodiode for monitoring the laser output, a thermistor for monitoring laser heatsink temper...
Description DWDM 1.25 Gb/s DFB Laser Module with Integral Optical Isolator(带积分光隔离器的DWDM 1.25 Gb/s DFB激光模 密集波分复用1.25 Gb / s的光隔离器的积分DFB激光器模块(带积分光隔离器DWDM技.25 Gb / s的激光器激光模块)
DWDM 1.25 Gb/s DFB Laser Module with Integral Optical Isolator(甯?Н???????ㄧ?DWDM 1.25 Gb/s DFB婵??妯″?

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    Q62703-Q256 LD271H LD271HL Q62703-Q838 Q62703-Q148 Q62703-Q833 LD271

Siemens Group
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62703-Q256 LD271H LD271HL Q62703-Q838 Q62703-Q148 Q62703-Q833 LD271
OCR Text ...e, fabricated in a liquid phase epitaxy process q High reliability q High pulse handling capability q long leads q Available in groups q Same package as SFH 300, SFH 203 Applications q IR remote control of hi-fi and TV-sets, video tape reco...
Description GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

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    TriQuint Semiconductor,Inc.
Part No. TQHBT3
OCR Text ... stop for uniformity ? mocvd epitaxy ? high density interconnects; ? 2 global, 1 local ? over 6 m total thickness ? dielectric encapsulated metals ? thick metal interconnects: ? enhanced thermal management ? minimum ...
Description InGaP HBT Foundry Service

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    TriQuint Semiconductor,Inc.
TriQuint Semiconductor, Inc.
Part No. TQHBT
OCR Text ...ch stop for uniformity ? mocvd epitaxy ? high linearity in pa applications ? high density interconnects; ? 2 global, 1 local ? over 6 m total thickness ? dielectric encapsulated metals ? thick metal interconnects: ? enhanced...
Description nullPrecision, 100UA Gain Selectable Amplifier nullPrecision00uA的可选增益放大器

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For epitaxy Found Datasheets File :: 119    Search Time::1.516ms    
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