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  ed-15 Datasheet PDF File

For ed-15 Found Datasheets File :: 27771    Search Time::2.219ms    
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    AN87C196 AN87C196LB 87C196LB AN87C196LB-20

INTEL[Intel Corporation]
Part No. AN87C196 AN87C196LB 87C196LB AN87C196LB-20
OCR Text ... 8 X X XXXXX XX ed pe eS vic De n tio ily ma am or tF In f uc ge od Pr lta ns Vo tio nd Op sa ry es mo oc Pr me mra og Pr ns...15 16 17 18 19 20 7 6 5 4 3 2 1 52 51 50 49 48 47 AD15 / P4.7 / PBUS.15 P5.2 / PLLEN /WR# / WR...
Description CHMOS 16-bit microcontroller. 24 Kbytes OTPROM, 768 bytes RAM, 20 MHz

File Size 281.00K  /  19 Page

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    APT5010JLC

Advanced Power Technology Ltd.
Part No. APT5010JLC
OCR Text ...che Energy AL IC HN EC ON TI ED AT NC RM VA FO AD IN 500 44 176 30 40 450 3.6 -55 to 150 300 44 50 (Repetitive and Non-Repetitive) 1 4...15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Cr...
Description POWER MOS VI 500V 44A 0.100 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.93K  /  2 Page

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    APT5014B2LC APT5014LLC APT5014

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
Part No. APT5014B2LC APT5014LLC APT5014
OCR Text ...che Energy AL IC HN EC ON TI ED AT NC RM VA FO AD IN 500 37 148 30 40 450 3.6 -55 to 150 300 37 35 (Repetitive and Non-Repetitive) 1 4...15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Cr...
Description POWER MOS VI 500V 37A 0.140 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET

File Size 34.16K  /  2 Page

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    APT5015BLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
Part No. APT5015BLC
OCR Text ...che Energy AL IC HN EC ON TI ED AT NC RM VA FO AD IN 500 32 128 30 40 370 2.96 300 32 30 -55 to 150 (Repetitive and Non-Repetitive) 1 ...15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Cr...
Description POWER MOS VI 500V 32A 0.150 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET

File Size 28.40K  /  2 Page

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    APT5017BLC APT5017SLC APT10086BLC APT10086SLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5017BLC APT5017SLC APT10086BLC APT10086SLC
OCR Text ...che Energy AL IC HN EC ON TI ED AT NC RM VA FO AD IN 500 30 120 30 40 370 2.96 300 30 30 -55 to 150 (Repetitive and Non-Repetitive) 1 ...15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Cr...
Description POWER MOS VI 500V 30A 0.170 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.77K  /  2 Page

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    APT5020BLC APT5020SLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5020BLC APT5020SLC
OCR Text ...che Energy AL IC HN EC ON TI ED AT NC RM VA FO AD IN 500 26 104 30 40 300 2.4 -55 to 150 300 26 30 (Repetitive and Non-Repetitive) 1 4...15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 050-5901 Rev A 11-99 DYNAMIC CHARACTERIST...
Description POWER MOS VI 500V 26A 0.200 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.78K  /  2 Page

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    APT50M50JLC APT5010JLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT50M50JLC APT5010JLC
OCR Text ...che Energy AL IC HN EC ON TI ED AT NC RM VA FO AD IN 500 77 308 30 40 700 5.6 -55 to 150 300 77 50 (Repetitive and Non-Repetitive) 1 4...15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Cr...
Description POWER MOS VI 500V 77A 0.050 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.93K  /  2 Page

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    APT50M60L2VR

ADPOW[Advanced Power Technology]
Part No. APT50M60L2VR
OCR Text ...che Energy AL IC HN EC ON TI ED AT NC RM VA FO AD IN 500 77 308 30 40 825 5.0 -55 to 150 300 77 50 (Repetitive and Non-Repetitive) 1 4...15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 050-5986 rev- 11-2000 DYNAMIC CHARACTERIS...
Description POWER MOS V 500V 77A 0.060 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 33.79K  /  2 Page

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    APT8024B2VFR APT8024LVFR APT50M85B2VFR APT50M85LVFR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT8024B2VFR APT8024LVFR APT50M85B2VFR APT50M85LVFR
OCR Text ...che Energy AL IC HN EC ON TI ED AT NC RM VA FO AD IN 800 33 132 30 40 625 5.0 -55 to 150 300 33 50 (Repetitive and Non-Repetitive) 1 4...15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Cr...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 33A 0.240 Ohm

File Size 39.43K  /  2 Page

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    APT8024B2VR APT8024LVR

ADPOW[Advanced Power Technology]
Part No. APT8024B2VR APT8024LVR
OCR Text ...che Energy AL IC HN EC ON TI ED AT NC RM VA FO AD IN 800 33 132 30 40 625 5.0 -55 to 150 300 33 50 (Repetitive and Non-Repetitive) 1 4...15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Cr...
Description POWER MOS V 800V 33A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 38.06K  /  2 Page

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