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  dur Datasheet PDF File

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    P8051AH 8751H-8

Intel Corporation
Part No. P8051AH 8751H-8
OCR Text ...rnal pullups when emitting 1?s. dur- ing accesses to external data memory that use 8-bit addresses (movx @ri), port 2 emits the contents of the p2 special function register. port 2 also receives the high-order address bits dur- ing programm...
Description MCS51 8-BIT CONTROL-ORIENTED MICROCONTROLLERS
   MCS51 8-BIT CONTROL-ORIENTED MICROCONTROLLERS

File Size 756.37K  /  21 Page

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    SXX16NRP SXX16NTP SXX16R SXX16RTP S8015L56 SK015LTP

http://
Littelfuse
Part No. SXX16NRP SXX16NTP SXX16R SXX16RTP S8015L56 SK015LTP
OCR Text ... 1. 01 0.0 50.0 pulse cur r ent dur ation (t w ) - ms p eak disc har ge curr ent (i tm ) - amps i trm t w 0.0 0.2 0.4 0.6 0.8 1. 0 1. 2 02 55 07 51 00 12 51 50 norm aliz ed p eak curr ent case te mpera tu re (t c ) - c 265 revised:...
Description Excellent unidirectional switches for phase control applications
15 and 16 Amp Standard SCRs
15 A, 1000 V, SCR, TO-220AB

File Size 931.00K  /  8 Page

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    http://
Silicon Storage Technol...
Part No. SST32HF402-70-4E-L3K SST32HF202-70-4E-L3K SST32HF402-70-4C-L3K SST32HF202-70-4C-L3K
OCR Text ... tasks. any sdp commands loaded dur- ing the internal program operation will be ignored. flash sector/block- erase operation the flash sector/block-erase operation allows the system to erase the device on a sector-by-sector (or block-by- bl...
Description Multi-Purpose Flash (MPF) SRAM ComboMemory

File Size 398.37K  /  30 Page

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    Micron
Part No. JS28F064M29EWHA JS28F064M29EWBA JS28F064M29EWLA RC28F128M29EWXX PZ28F064M29EWTA PZ28F064M29EWLX JR28F032M29EWBA
OCR Text ... C read oper ation on any block dur ing a pr o- gram susp end oper ation C read or pr ogram oper ation on one block dur - ing an erase susp end oper ation on another block ? bl ank check oper ation to v er ify an er ased block ? u nlock b y...
Description Parallel NOR Flash Embedded Memory

File Size 974.50K  /  87 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H560838F-TC/LA2 K4H560838F-TC/LB3 K4H561638F-TC/LA2 K4H560838F-TC/LAA K4H561638F-TC/LAA K4H560838F-TC/LB0 K4H561638F-TC/LB0 K4H561638F-TC/LB3
OCR Text ...ng ck, ck and cke are disabled dur- ing power-down and self refresh modes, providing low standby power. cke will recognize an lvcmos low level prior to vref being stable on power-up. cs input chip select : cs enables(registered low) and...
Description 256Mb F-die DDR SDRAM Specification 256Mb的的F - DDR SDRAM内存芯片规格
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, Single Ch. 8-PDIP
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PLCC -40 to 125

File Size 331.11K  /  23 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4H280438F-ULA2 K4H280838F-UCB3 K4H280838F-ULB3 K4H280438F-UCA2 K4H280838F-UCA2 K4H280438F-UCB0 K4H280438F-UCA0 K4H280838F-UCB0 K4H280438F-ULA0 K4H280838F-ULB0 K4H280438F-UCB00
OCR Text ...ng ck, ck and cke are disabled dur- ing power-down and self refresh modes, providing low standby power. cke will recognize an lvcmos low level prior to vref being stable on power-up. cs input chip select : cs enables(registered low) and...
Description 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅DDR SDRAM的规6 TSOP-II免费(符合RoHS

File Size 299.74K  /  23 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4H560438E-ULAA K4H560838E-ULAA K4H560438E-UCAA K4H560838E-UCAA K4H560438E-ULB0 K4H560438E-ULA2 K4H560438E-ULB3 K4H560438E-UC/LAA K4H560838E-ULB3 K4H560438E-UCB3 K4H560438E-UCB0 K4H560838E-UCB3 K4H560438E-UC/LA2 K4H560438E-UC/LB0 K4H560438E-UC/LB3 K4H560438E-UCA2 K4H560838E-UC/LB0 K4H560838E-UC/LA2 K4H560838E-UC/LB3 K4H560838E-UCB0 K4H560838E-UC/LAA K4H560838E-UCA2 K4H560838E-ULA2
OCR Text ...ng ck, ck and cke are disabled dur- ing power-down and self refresh modes, providing low standby power. cke will recognize an lvcmos low level prior to vref being stable on power-up. cs input chip select : cs enables(registered low) and...
Description 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 256Mb的电子芯片与DDR SDRAM的规格铅66 TSOP-II免费(符合RoHS

File Size 298.78K  /  23 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H280438F-TC/LA0 K4H280838F-TC/LA2 K4H280838F-TC/LB3 K4H280438F-TC/LA2 K4H280838F-TC/LB0 K4H280438F-TC/LB0
OCR Text ...ng ck, ck and cke are disabled dur- ing power-down and self refresh modes, providing low standby power. cke will recognize an lvcmos low level prior to vref being stable on power-up. cs input chip select : cs enables(registered low) and...
Description 128Mb F-die DDR SDRAM Specification 128Mb的的F - DDR SDRAM内存芯片规格
RESISTOR, 2M OHM, 0.063W, 1%

File Size 208.51K  /  23 Page

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    MULTI CONTACT AG
Part No. 66.9649-26
OCR Text ...pper alloy 1) alliage de cuivre dur 2) kupferlegierung 2) copper alloy 2) alliage de cuivre typ type type best.-nr. order no. n de cde bemessungsspannung / -strom rated voltage / current tension / intensit assigne einzelteile: knpftlle / st...
Description INTERCONNECTION DEVICE

File Size 394.03K  /  7 Page

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