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Asahi Kasei Microsystems Co.,Ltd
Asahi Kasei Microsystems Co., Ltd.
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| Part No. |
AK4393 AK4393VF
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| OCR Text |
... advanced multi-bit system for ds modulator. this new architecture achieves the wider dynamic range, while keeping much the same superior ...117 120 db db dynamic range (-60dbfs with a-weighted) fs=96khz (note 7) 111 - 1... |
| Description |
ADVANCED MULTI-BIT 96KHZ 24-BIT DAC 先进的多6kHz4位DAC
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| File Size |
237.60K /
22 Page |
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it Online |
Download Datasheet
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Vishay
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| Part No. |
SUM110N02-03
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| OCR Text |
...oduct summary v (br)dss (v) r ds(on) ( ) i d (a) a 20 0.0026 @ v gs = 10 v 110 a d g s n-channel mosfet drain connected to tab to-2...117 80 120 ns turn-off delay time b t d(off) v dd = 10 v , r l = 0 . 117 i d 85 a, v g... |
| Description |
N-Channel 20-V (D-S) 175C MOSFET
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| File Size |
50.62K /
5 Page |
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it Online |
Download Datasheet |
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Asahi Kasei Microsystems Co.,Ltd
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| Part No. |
AK4395 AK4395VF
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| OCR Text |
... advanced multi-bit system for ds modulator. this new architecture achieves the wider dynamic range, while keeping much the same superior ...117 120 db db s/n (a-weighted) (note 8) ... |
| Description |
ADVANCED MULTI-BIT 192KHZ 24-BIT DAC
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| File Size |
280.25K /
26 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TPH6R003NL
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| OCR Text |
...w drain-source on-resistance: r ds(on) = 6.8 m ? (typ.) (v gs = 4.5 v) (4) low leakage current: i dss = 10 a (max) (v ds = 30 v) (5) ...117 34 2.8 1.6 30 38 150 -55 to 150 unit v a w mj a note: using continuously under heavy loads ... |
| Description |
Power MOSFET (N-ch single VDSS≤30V)
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| File Size |
233.58K /
9 Page |
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it Online |
Download Datasheet |
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