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diffused-junction Datasheet PDF File

For diffused-junction Found Datasheets File :: 5098 Search Time::1.812ms
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				NXP Semiconductors Philips Semiconductors
Part No.	BUJ101A
OCR Text	Diffused Power Transistor BUJ101A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 700 400 700 0.5 1 0.2 0.3 42 150 150 UNIT V ...
Description	Silicon Diffused Power Transistor
File Size	17.83K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	BUJ100 BUJ100_2
OCR Text	Diffused Power Transistor BUJ100 GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 700 400 700 1.0 2.0 0.5 1.0 2 150 150 UNIT V...
Description	Silicon Diffused Power Transistor From old datasheet system
File Size	61.35K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BU4540 BU4540AL
OCR Text	Diffused Power Transistor BU4540AL GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn t...Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 25 40 10 15 200 125 150 150 UNIT V ...
Description	Silicon Diffused Power Transistor
File Size	16.44K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BU4540AW
OCR Text	Diffused Power Transistor BU4540AW GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn t...Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 25 40 10 15 10 125 150 150 UNIT V V...
Description	Silicon Diffused Power Transistor
File Size	18.82K / 4 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BU2722AX BU2722
OCR Text	Diffused Power Transistor BU2722AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1700 825 10 25 10 14 150 6 45 150 150 UNIT V...
Description	Silicon Diffused Power Transistor
File Size	73.72K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BU2708AF
OCR Text	Diffused Power Transistor BU2708AF GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envel...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1700 825 8 15 4 6 5 45 150 150 UNIT V V A A ...
Description	Silicon Diffused Power Transistor
File Size	74.50K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	BU2725AF BU2725
OCR Text	Diffused Power Transistor BU2725AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envel...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1700 825 12 30 12 20 200 9 45 150 150 UNIT V...
Description	Silicon Diffused Power Transistor
File Size	67.16K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. Philips Semiconductors
Part No.	BU2722AF BU2722
OCR Text	Diffused Power Transistor BU2722AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1700 825 10 25 10 14 150 6 45 150 150 UNIT V...
Description	Silicon Diffused Power Transistor 扩散硅功率晶体管
File Size	71.65K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. Philips Semiconductors
Part No.	BU2720DX
OCR Text	Diffused Power Transistor BU2720DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1700 825 10 25 10 14 150 6 45 150 150 UNIT V...
Description	Silicon Diffused Power Transistor 10 A, 825 V, NPN, Si, POWER TRANSISTOR
File Size	73.00K / 7 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors]
Part No.	BU2515AF
OCR Text	Diffused Power Transistor BU2515AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic...Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 9 20 5 7.5 125 6 45 150 150 UNIT V ...
Description	Silicon Diffused Power Transistor
File Size	62.88K / 6 Page	View it Online	Download Datasheet

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