di-500 pdf Datasheet P10 Full Text Search --- IC-ON-LINE


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di-500 Datasheet PDF File

For di-500 Found Datasheets File :: 31569 Search Time::2.453ms
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				Vishay Siliconix
Part No.	60EPU04PBF12 60EPU04-N3 60APU04-N3 60APU04PBF
OCR Text	... recovery time t rr i f = 1 a, di f /dt = 200 a/s, v r = 30 v - 50 60 ns t j = 25 c i f = 60 a di f /dt = 200 a/s v r = 200 v -85- t j ...500 i f = 40 a i f = 60 a i f = 120 a 3000 2000 1000 vs-60epu04pbf, vs-60epu04-n3, vs-60apu04...
Description	Ultrafast Soft Recovery Diode, 60 A FRED Pt?
File Size	204.73K / 9 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	VS-80APF1.PBF VS-80APF1.-M3
OCR Text	...um reverse recovery time (ns) di/dt - rate of fall of forward current (a/s) 0 100 200 300 400 500 600 700 800 80epf.. series t j = 25 c i fm = 80 a i fm = 20 a i fm = 10 a i fm = 1 a i fm = 40 a 0 40 80 120 160 200 t rr - maximum r...
Description	Fast Soft Recovery Rectifier Diode, 80A
File Size	172.99K / 7 Page	View it Online	Download Datasheet

				Dynex Semiconductor
Part No.	DCR890F50 DCR890F55 DCR890F60 DCR890F65
OCR Text	... 12000a dv/dt* 1500v/s di/dt 200a/s * higher dv/dt selections available outline type code: f (see package deta...500 1000 1500 2000 2500 3000 3500 1.0 2.0 3.0 4.0 5.0 instantaneous on-state voltage, v t - (v) ins...
Description	Phase Control Thyristor
File Size	316.78K / 11 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp.
Part No.	FFA60UP30DNTU
OCR Text	... - 100 500 a a t rr i f =1a, di/dt = 100a/ s, v cc = 30v i f =30a, di/dt = 200a/ s, v cc = 195v t c = 25 c t c = 25 c - - - - 45 55 ns ns t a t b q rr i f =30a, di/dt = 200a/ s, v cc = 195v t c = 25 c t c = 25 c t ...
Description	300V Ultrafast Recovery Power Rectifier; Package: TO-3P; No of Pins: 3; Container: Rail 30 A, 300 V, SILICON, RECTIFIER DIODE
File Size	250.89K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FFPF20UA60DN
OCR Text	...0 a t rr i rr q rr i f = 10a, di/dt = 200a/ s t c = 25 o c 74 6 213 120 10 600 ns a nc w avl avalanche energy ( l = 40mh) 10 - - mj test...500 600 0.01 0.1 1 10 100 1000 10000 t c = 125 o c t c = 25 o c t c = 75 o c reverse current , i ...
Description	20A, 600V Ultra Fast II Rectifier
File Size	337.32K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	GA2.0TS60U
OCR Text	...ry charge 10714 c r g2 = 0 w di (rec) m /dt diode peak rate of fall of recovery 1922 a/s v cc = 360v during t b di/dt = 1300a/s ...500 600 0 100 200 300 400 500 600 700 ce safe operating area v = 20v t = 125c ge j v ...
Description	HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT
File Size	303.24K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	GA2.0TD120U
OCR Text	...y charge 12833 nc r g2 = 0 w di (rec) m /dt diode peak rate of fall of recovery 1740 a/s v cc = 720v during t b di/dt?1294a/s ...500 na v ge = 20v dynamic characteristics - t j = 125c (unless otherwise specified) electrical c...
Description	HALF-BRIDGE IGBT DOUBLE INT-A-PAK
File Size	299.49K / 10 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductor
Part No.	AOTF15B65M2
OCR Text	... diode ? high efficient turn-on di/dt controllability ? low vce(sat) enables high efficiencies ? low turn-off switching loss and softness ? ...500 t j =150c - - 1000 i ges gate-emitter leakage current - - 100 na g fs - 11 - s c ies - 925 - pf ...
Description	IGBT with Anti-Parallel Diode IGBTs
File Size	572.05K / 9 Page	View it Online	Download Datasheet

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