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TOSHIBA
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| Part No. |
TPCC8003-H
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| OCR Text |
...(b) note 3: v dd = 24 v, t ch = 25c (initial), l = 200 h, r g = 25 , i ar = 13 a note 4: repetitive rating: pulse width limited by maximum channel temperature note 5: * weekly code: (three dig... |
| Description |
Power MOSFET (N-ch single VDSS≤30V)
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| File Size |
231.50K /
7 Page |
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it Online |
Download Datasheet
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TOSHIBA
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| Part No. |
TPCA8068-H
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| OCR Text |
...board (b), figure 5.2 note 4: v dd = 24 v, t ch = 25 (initial), l = 0.2 mh, r g = 1.2 ? , i ar = 15 a fig. fig. fig. fig. 5.1 5.1 5.1 5.1 device mounted on a glass-epoxy device mounted on a glass-epoxy device mounted on a glass... |
| Description |
Power MOSFET (N-ch single VDSS≤30V)
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| File Size |
227.73K /
9 Page |
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it Online |
Download Datasheet |
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Supertex
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| Part No. |
MD1213
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| OCR Text |
...high speed dual mosfet driver v dd 2 v h v l in a out a in b level shifter oe v ss 2 v l out b v ss 2 level shifter level shifter v dd 2 v h...dc electrical characteristics (over operating conditions unless otherwise speci? ed, v h = v dd1 =... |
| Description |
High Speed Dual MOSFET Driver
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| File Size |
736.42K /
7 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TPC8228-H
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| OCR Text |
...ied to both devices.) note 6: v dd = 24 v, t ch = 25 (initial), l = 1.0 mh, i ar = 3.8 a fig. fig. fig. fig. 5.1 5.1 5.1 5.1 device mounted on a glass-epoxy device mounted on a glass-epoxy device mounted on a glass-epoxy device... |
| Description |
Power MOSFET (N-ch dual)
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| File Size |
255.40K /
9 Page |
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it Online |
Download Datasheet |
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OmniVision
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| Part No. |
OV9665
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| OCR Text |
...ages (with respect to ground) v dd-a 4.5 v v dd-io 4.5 v all input/output voltages (with respect to ground) -0.3v to v dd-io +0.5v lead-free temperature, surface-mount process 245oc table 3 dc characteristics (-30c < t a < 70c) symbol par... |
| Description |
Color CMOS SXGA CameraChip Sensor
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| File Size |
595.70K /
34 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TPCC8001-H
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| OCR Text |
...(b) note 3: v dd = 24 v, t ch = 25c (initial), l = 200 h, r g = 25 , i ar = 22 a note 4: repetitive rating: pulse width limited by maximum channel temperature note 5: * weekly code: (three dig... |
| Description |
Power MOSFET (N-ch single VDSS≤30V)
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| File Size |
231.59K /
7 Page |
View
it Online |
Download Datasheet |
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Hitachi,Ltd.
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| Part No. |
2SK2334L
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| OCR Text |
...stics v = 10 v
25 v
50 v dd v gs ds v i = 20 a d v = 50 v
25 v
10 v dd 20 40 60 80 100 drain current i (a) d switching time t (ns) switching characteristics 1000 200 500 100 20 10 50 0.3 1 3 10 30 v = 10 v, ... |
| Description |
Silicon N-Channel MOS FET(N沟道MOSFET)
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| File Size |
68.01K /
9 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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