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WESTCODE SEMICONDUCTORS LTD
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| Part No. |
M0736LC450
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| OCR Text |
... sink =25c, (note 2) 1474 a i f(d.c.) d.c. forward current, t sink =25c, (note 4) 1229 a i fsm peak non-repetitive surge t p =10ms, v rm =0....100a/s 3000a 1000a 1.00e+01 1.00e+02 1.00e+03 1.00e+04 1.00e+05 1.00e-05 1.00e-04 1.00e-03 1.00e-02 ... |
| Description |
736 A, 4500 V, SILICON, RECTIFIER DIODE
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| File Size |
586.17K /
11 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE3036
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| OCR Text |
... at low light levels. Features: D Popular TO18 Type Hermetic Package for Easy Handling and Mounting D Sensitive Throughout Visible and Near ...100A V(BR)CEO IC = 100A V(BR)EBO IE = 100A
Electrical Characteristics (Cont'd): (TA = +25C unless... |
| Description |
Phototransistor Silicon NPN Photo Darlington Light Detector
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| File Size |
19.37K /
2 Page |
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CRYDOM CORP
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| Part No. |
EFG14G EFG15E
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| OCR Text |
...a t ion s c u rr e n t c od e d e f g symbol specification ratings i d maximum dc output current (tc = 85?c) see part num ber identificati...100a 1.55v @ 125a t j operating junction temperature range -40 ? c to +125 ? c di/dt critical rate... |
| Description |
3 PHASE, 170 A, 1400 V, SILICON, RECTIFIER DIODE 3 PHASE, 170 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
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| File Size |
130.41K /
3 Page |
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Alpha
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| Part No. |
AO4435
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| OCR Text |
...ge temperature range t a =70c i d gate-source voltage p d power dissipation a t a =25c g s s s d d d d ao4435 p-channel enhancement mode f...100a/ s drain-source breakdown voltage on state drain current i d = -250 a, v gs = 0v v gs = ... |
| Description |
): 250 (@8MHz); Operating Frequency / Supply Voltage: 1.8 to 5.5V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLSP0020JB-A
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| File Size |
165.14K /
4 Page |
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it Online |
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