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53100 ON1750 CCLM2000 47382 NCP12 TISP3082 SM160307 KE220
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For crack Found Datasheets File :: 595    Search Time::1.219ms    
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    N.A.
Part No. NFV10D391K
OCR Text ...ark, Date code Without dirt and crack, marking should be clear D(max.) k(max.) T(max.) F 12.5 5.0 DESCRIPTION (1) 7.5 1.0 0.8 0.1 75 25.0 3.5 Dimensions d (max.) L(min.) Unit: mm (1) See Page 3, Dimensions Table TY...
Description Varistor.

File Size 65.25K  /  6 Page

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    TLP1243

Toshiba Semiconductor
Part No. TLP1243
OCR Text ...ay cause the package to melt or crack. When attaching the device to the metal board, always hold the body of the device. Do not hold it by the connector. Ensure that the board is flat, and not warped or twisted. Attach the device to a metal...
Description
File Size 226.92K  /  9 Page

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    HBCR-1611 HBCR-1610 HBCR-1612 HBCR-1697

Agilent(Hewlett-Packard...
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. HBCR-1611 HBCR-1610 HBCR-1612 HBCR-1697
OCR Text ...tures, may cause the package to crack from internal stresses. There is a reliability concern that moisture may then enter the package over a period of time, and metal corrosion may take place, degrading the IC performance. To reduce the ...
Description Single Chip Bar Code Decode IC

File Size 189.41K  /  10 Page

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    RMPA1850

FAIRCHILD[Fairchild Semiconductor]
Part No. RMPA1850
OCR Text ...iner grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. * Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of ...
Description Quad Band GSM/GPRS Power Amplifier Module

File Size 116.02K  /  9 Page

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    RA07M3340M RA07M3340M-E01 RA07M3340M-01

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. RA07M3340M RA07M3340M-E01 RA07M3340M-01
OCR Text ...amic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). A thermal compound between module and heat sink is recommended for low thermal contact resist...
Description MITSUBISHI RF MOSFET MODULE 三菱射频MOSFET模块

File Size 66.40K  /  9 Page

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    RA07M3843M RA07M3843M-101

Mitsubishi Electric Semiconductor
Part No. RA07M3843M RA07M3843M-101
OCR Text ...amic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). A thermal compound between module and heat sink is recommended for low thermal contact resist...
Description ROHS COMPLIANCE , 378-430MHZ 7W 7.2V, 2STAGE AMP. FOR PORTABLE RADIO

File Size 94.61K  /  8 Page

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    RA45H4045MR RA45H4045MR-101

http://
Mitsubishi Electric Semiconductor
Part No. RA45H4045MR RA45H4045MR-101
OCR Text ...amic substrate in the module to crack by bending forces, either immediately when screwing or later when thermal expansion forces are added). Thermal compound between module and heat sink is recommended for low thermal contact resistance and...
Description 400-450MHZ 45W 12.5V, 3 STAGE AMP. FOR MOBILE RADIO

File Size 93.42K  /  8 Page

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    RA45H4452M-01 RA45H4452M-E01 RA45H4452M

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA45H4452M-01 RA45H4452M-E01 RA45H4452M
OCR Text ...amic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). A thermal compound between module and heat sink is recommended for low thermal contact resist...
Description 440-520MHZ 45W 12.5V MOBILE RADIO

File Size 91.37K  /  9 Page

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    M150XN07 M150XN07V1

AUO
ETC
List of Unclassifed Manufacturers
Part No. M150XN07 M150XN07V1
OCR Text ... made of glass, it may break or crack if dropped or bumped on hard surface. Since CMOS LSI is used in this module, take care of static electricity and insure human earth when handling. Do not open nor modify the Module Assembly. Do not pres...
Description 15.0” XGA COLOR TFT-LCD MODULE
15.0 XGA Color TFT-LCD Module

File Size 238.80K  /  26 Page

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    RA13H3340M RA13H3340M-E01 RA13H3340M-01

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA13H3340M RA13H3340M-E01 RA13H3340M-01
OCR Text ...amic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). A thermal compound between module and heat sink is recommended for low thermal contact resist...
Description 330-400MHz 13W 12.5V MOBILE RADIO

File Size 64.34K  /  9 Page

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