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				Motorola, Inc. ON Semiconductor
Part No.	BAS70-04LT1 ON0122 BAS70-04LT1/D
OCR Text	...the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanica...
Description	Dual Series Schottky Diode(高速开关应用，-0.75V正向电压，反向电0V的双肖特基势垒二极管) CYDC064B08 West Bridge Peripheral Controllers; Bus Width: x16; Speed: 55 ns SCHOTTKY BARRIER DIODES From old datasheet system
File Size	72.67K / 4 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola, Inc]
Part No.	BAT54ALT1 ON0124
OCR Text	...the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanica...
Description	From old datasheet system 30 VOLTS SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODES
File Size	76.64K / 4 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	DA121TT1 DA121TT1/D
OCR Text	...the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanica...
Description	Silicon Switching Diode
File Size	124.23K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola, Inc]
Part No.	DTA143EE DTA143EE_D ON0279
OCR Text	...he device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanica...
Description	Bias Resistor Transistor CASE 463-01, STYLE 1 SOT-416/SC-90 CASE 463-1, STYLE 1 SOT-16/SC-0 From old datasheet system
File Size	93.71K / 4 Page	View it Online	Download Datasheet

				MOTOROLA INC ON Semi MOTOROLA[Motorola, Inc]
Part No.	MMBD7000LT1 ON2085
OCR Text	...the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanica...
Description	Dual Switching Diode DUAI SWITCHING DIODE From old datasheet system
File Size	75.82K / 4 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MMPQ3725
OCR Text	...the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanica...
Description	Quad Core Drier Transistor 4 CHANNEL, Si, POWER TRANSISTOR
File Size	111.92K / 4 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MMSD103T1 MMSD103 MMSD103T1-D
OCR Text	...the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanica...
Description	High Voltage Switching Diode
File Size	45.80K / 4 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	PZTA92T1
OCR Text	...he device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanica...
Description	PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
File Size	58.68K / 4 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPB02N60C3 SPP02N60C3
OCR Text	Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances 650 3 1.8 V A P-TO220-3-1 Type SPP02N6...
Description	for lowest Conduction Losses & fastest Switching Cool MOS™ Power Transistor Cool MOS& Power Transistor Cool MOS Power Transistor
File Size	279.85K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPB02N60S5 SPP02N60S5
OCR Text	Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance P-TO220-3-1 VDS RDS...
Description	Cool MOS?/a> Power Transistor Cool MOS⑩ Power Transistor Cool MOS Power Transistor for lowest Conduction Losses
File Size	302.75K / 10 Page	View it Online	Download Datasheet

For cool- Found Datasheets File :: 4064 Search Time::0.969ms
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