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TriQuint Semiconductor, Inc.
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| Part No. |
AP502
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| OCR Text |
... aclr vs. channel power 3gpp w-cdma, 1fa, test model 1+32 dpch, 5 mhz offset 2140 mhz, icq=850ma -60 -55 -50 -45 -40 18 20 22 24 26 28 output channel power (dbm) aclr (dbc) -40 c +25 c +85 c imd3, imd5, oip3 vs. ouptut power 2140 mhz, +2... |
| Description |
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| File Size |
849.49K /
5 Page |
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Cree Research
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| Part No. |
PFM21030
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| OCR Text |
... produce optimum linearity for cdma protocol. 17 tracking fet periphery ratio a) stg 1 track b) stg 2 track 3.0 1.7 % % ...wcdma protocol. impedance is from the module output lead looking into the output matching circuit... |
| Description |
2-Stage Power Module Enhancement-Mode Lateral MOSFETs
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| File Size |
448.98K /
13 Page |
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TriQuint Semiconductor, Inc.
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| Part No. |
AP502-PCB
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| OCR Text |
... aclr vs. channel power 3gpp w-cdma, 1fa, test model 1+32 dpch, 5 mhz offset 2140 mhz, icq=850ma -60 -55 -50 -45 -40 18 20 22 24 26 28 output channel power (dbm) aclr ( dbc ) -40 c +25 c +85 c imd3, imd5, oip3 vs. ouptut power 2140 mhz,... |
| Description |
UMTS-band 4W HBT Amplifier Module UMTS的频瓦异质结双极晶体管放大器模块
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| File Size |
385.83K /
5 Page |
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TriQuint Semiconductor,Inc.
TriQuint Semiconductor, Inc.
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| Part No. |
TQM7M6001
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| OCR Text |
... not e 1: test condit i ons cdma high mode: v cc1 =3.4vdc, v cc2 =3.4vdc, v ref =2.85vdc, v mode =low, tc=25c, z s =z l =50 ohm, ...wcdma designs in imt2100 band package style 4mm x 4mm lga package (dimensions in mm): a... |
| Description |
nullPrecision, 100UA Gain Selectable Amplifier 1920 MHz - 1980 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
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| File Size |
130.22K /
9 Page |
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WJ Communication. Inc.
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| Part No. |
AP622
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| OCR Text |
... Repeaters
Specifications
W-cdma 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq...Wcdma, Vcc = 28V, Icq = 120 mA, 25 C
ACLR1 vs. Output Power vs. Frequency
Wcdma, Vcc = 28V, Icq ... |
| Description |
UMTS-band 4W HBT Amplifier Module
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| File Size |
187.07K /
4 Page |
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Infineon Technologies
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| Part No. |
PTFA181001GL
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| OCR Text |
...of 11 rev. 01, 2008-06-16 is-95 cdma performance v dd = 28 v, i dq = 750 ma, ? = 1880 mhz 0 5 10 15 20 25 30 35 40 33 35 37 39 41 43 45 47 output power (dbm), avg. drain efficiency (%) -80 -70 -60 -50 -40 -30 -20 -10 adj. ch. power ratio... |
| Description |
Thermally-Enhanced High Power RF LDMOS FET
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| File Size |
333.44K /
11 Page |
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Price and Availability
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