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    MRF158

MOTOROLA[Motorola, Inc]
Part No. MRF158
OCR Text ...0 Unit Vdc Vdc Vdc Adc Watts mW/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Max 13.2 Unit C/W N...NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Cente...
Description TMOS BROADBAND RF POWER FET

File Size 94.07K  /  6 Page

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    MRF16006

MOTOROLA[Motorola, Inc]
Part No. MRF16006
OCR Text ...arge-signal, common base, Class-C CW amplifier applications in the range 1600 - 1640 MHz. * Specified 28 Volt, 1.6 GHz Class-C Characteristi...NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Cente...
Description RF POWER TRANSISTOR NPN SILICON

File Size 82.98K  /  6 Page

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    MRF166C

MOTOROLA[Motorola, Inc]
Part No. MRF166C
OCR Text ...00 Unit Vdc Vdc Adc Adc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 2.5 Uni...NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Cente...
Description MOSFET BROADBAND RF POWER FETs

File Size 111.74K  /  6 Page

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    MRF166W

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF166W
OCR Text ... 200 Unit Vdc Vdc Adc ADC Watts C/W C C THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case RJC 1.0 C/W NOTE: Handling and Pa...NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Cente...
Description TMOS BROADBAND RF POWER FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

File Size 134.64K  /  6 Page

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    P82B715 P82B715PN P82B715TD 82B715

http://
NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. P82B715 P82B715PN P82B715TD 82B715
OCR Text ...in Dual In-Line or SO 82B715 N.C. 1 LX SX GND 2 3 4 8 7 6 5 VCC LY SY N.C. SU00290 PINNING FEATURES PIN 1 2 3 4 5 6 7 8 SYMBOL N.C. ...net resistance and net capacitance) of the total system is set to 1 microsecond. The total time cons...
Description I2C bus extender

File Size 95.76K  /  10 Page

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    PHD12N10E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHD12N10E
OCR Text .... 100 14 75 175 0.16 UNIT V A W C PINNING - SOT428 PIN 1 2 3 tab gate drain source DESCRIPTION PIN CONFIGURATION tab SYMBOL d ...Net Mass: 1.4 g seating plane 6.73 max 1.1 2.38 max 0.93 max 5.4 tab 4 min 6.22 max 10.4 max ...
Description PowerMOS transistor

File Size 78.59K  /  7 Page

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    PHD12NQ15T PHP12NQ15T PHB12NQ15T PHB12NQ15T/T3

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PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
Part No. PHD12NQ15T PHP12NQ15T PHB12NQ15T PHB12NQ15T/T3
OCR Text ... temperature CONDITIONS Tj = 25 C to 175C Tj = 25 C to 175C; RGS = 20 k Tmb = 25 C; VGS = 10 V Tmb = 100 C; VGS = 10 V Tmb = 25 C Tmb = 25 C...Net mass:2g) Notes 1. This product is supplied in anti-static packaging. The gate-source input must...
Description N-channel TrenchMOS transistor 12.5 A, 150 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 110.51K  /  12 Page

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    PHD44N06LT PHP44N06LT PHB44N06LT

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. PHD44N06LT PHP44N06LT PHB44N06LT
OCR Text ... temperature CONDITIONS Tj = 25 C to 175C Tj = 25 C to 175C; RGS = 20 k Tmb = 25 C Tmb = 100 C Tmb = 25 C Tmb = 25 C MIN. - 55 MAX. 55 55 1...Net Mass: 2 g PHP44N06LT, PHB44N06LT, PHD44N06LT 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min ...
Description TrenchMOS transistor Logic level FET 44 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 80.20K  /  10 Page

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    PHD5N20E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHD5N20E
OCR Text ...ature range CONDITIONS Tmb = 25 C; VGS = 10 V Tmb = 100 C; VGS = 10 V Tmb = 25 C Tmb = 25 C Tmb > 25 C VDD 50 V; starting Tj = 25C; RGS = 5...Net Mass: 1.4 g seating plane 6.73 max 1.1 2.38 max 0.93 max 5.4 tab 4 min 6.22 max 10.4 max ...
Description PowerMOS transistor

File Size 50.47K  /  7 Page

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    PHP5N20E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHP5N20E
OCR Text ...ature range CONDITIONS Tmb = 25 C; VGS = 10 V Tmb = 100 C; VGS = 10 V Tmb = 25 C Tmb = 25 C Tmb > 25 C VDD 50 V; starting Tj = 25C; RGS = 5...Net Mass: 2 g 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 ...
Description PowerMOS transistor

File Size 47.45K  /  7 Page

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