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    MPC9230

http://
MOTOROLA[Motorola, Inc]
Part No. MPC9230
OCR Text ...and is controlled by the T[2:0] bits in the serial data stream. In order to minimize the PLL jitter, it is recommended to avoid active signal on the TEST output. 1. The VCO frequency range of 800-1600 MHz is available at an ambient tempe...
Description 800 MHz Low Voltage PECL Clock Synthesizer
800 MHz Low Voltage PECL Clock Synthesizer

File Size 292.31K  /  16 Page

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    TC58V64BDC

TOSHIBA[Toshiba Semiconductor]
Part No. TC58V64BDC
OCR Text bits) CMOS NAND E PROM (8m BYTE SmartMedia DESCRIPTION ) The TC58V64B is a single 3.3-V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes 16 pages 1024 blocks....
Description 64-MBIT (8m x 8 bits) CMOS NAND E PROM (8m BYTE SmartMedia )
64-MBIT (8m  8 bits) CMOS NAND E2PROM (8m BYTE SmartMediaTM)
64-MBIT (8m x 8 bits) CMOS NAND E2PROM (8m BYTE SmartMediaTM)

File Size 341.43K  /  33 Page

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    ICX255AK ICX055BK

SONY[Sony Corporation]
Part No. ICX255AK ICX055BK
OCR Text ... rear 1 pixel * Number of dummy bits: Horizontal 16 Vertical 1 (even fields only) * Substrate material: Silicon TM EXview HAD CCD is a trademark of Sony Corporation. EXview HAD CCD is a CCD that drastically improves light efficiency by...
Description Diagonal 6mm (Type 1/3) CCD Image Sensor for PAL Color Video Cameras

File Size 195.79K  /  18 Page

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    K7Q161862 K7Q161862B K7Q163662B

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K7Q161862 K7Q161862B K7Q163662B
OCR Text ...B and K7Q161862B are 18,874,368-bits QDR(Quad Data Rate) Synchronous Pipelined Burst SRAMs. They are organized as 524,288 words by 36bits for K7Q163662B and 1,048,576 words by 18 bits for K7Q161862B. The QDR operation is possible by support...
Description 512Kx36 & 1Mx18 QDRTM b2 SRAM
512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36

File Size 333.83K  /  17 Page

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    RC28F640J3A-120 RC28F320J3 E28F128J3A RC28F128J3 E28F640J3A-120 RC28F128J3A-150 RC28F320J3A-110 28F128 28F128J3A E28F128

INTEL[Intel Corporation]
Part No. RC28F640J3A-120 RC28F320J3 E28F128J3A RC28F128J3 E28F640J3A-120 RC28F128J3A-150 RC28F320J3A-110 28F128 28F128J3A E28F128J3A-150 E28F320J3A-110
OCR Text ... memory products provide 2X the bits in 1X the space, with new features for mainstream performance. Offered in 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, these devices bring reliable, two-bit-per-cell storage technology to the fla...
Description 3 Volt Intel StrataFlash Memory

File Size 317.48K  /  58 Page

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    S71PL129JB S71PL129JB0BAW9Z0 S71PL129JA0BAI9P0 S71PL129JA0BAW9P0 S71PL129JA0 S71PL129JA0BAI9B0 S71PL129JA0BAI9B2 S71PL12

SPANSION[SPANSION]
Part No. S71PL129JB S71PL129JB0BAW9Z0 S71PL129JA0BAI9P0 S71PL129JA0BAW9P0 S71PL129JA0 S71PL129JA0BAI9B0 S71PL129JA0BAI9B2 S71PL129JA0BAI9B3 S71PL129JA0BAI9P2 S71PL129JA0BAI9P3 S71PL129JA0BAI9U0 S71PL129JA0BAI9U2 S71PL129JA0BAI9U3 S71PL129JA0BAI9Z0 S71PL129JA0BAI9Z2 S71PL129JA0BAI9Z3 S71PL129JA0BAW9B0 S71PL129JA0BAW9B2 S71PL129JA0BAW9B3 S71PL129JA0BAW9P2 S71PL129JA0BAW9P3 S71PL129JA0BAW9U0 S71PL129JA0BAW9U3 S71PL129JA0BAW9Z0 S71PL129JA0BAW9Z2 S71PL129JA0BAW9Z3 S71PL129JA0BFI9B0 S71PL129JA0BFI9B2 S71PL129JA0BFI9B3 S71PL129JA0BFI9P0 S71PL129JB0BAW9U0 S71PL129JB0BAW9U2 S71PL129JB0BAW9U3 S71PL129JC0BFW9Z3 S71PL129JA0BAW9U2 S71PL129JA0BFI9P2 S71PL129JA0BFI9P3 S71PL129JA0BFI9U0 S71PL129JA0BFI9U2 S71PL129JA0BFI9U3 S71PL129JA0BFI9Z0 S71PL129JA0BFI9Z2 S71PL129JA0BFI9Z3 S71PL129JA0BFW9B0 S71PL129JA0BFW9B2 S71PL129JA0BFW9B3 S71PL129JA0BFW9P0 S71PL129JA0BFW9P2 S71PL129JA0BFW9P3 S71PL129JA0BFW9U0 S71PL129JA0BFW9U2 S71PL129JA0BFW9U3 S71PL129JA0BFW9Z0 S71PL129JA0BFW9Z2 S71PL129JA0BFW9Z3 S71PL129JB0 S71PL129JB0BAI9B0 S71PL129JB0BAI9B2 S71PL129JB0BAI9B3 S71PL129JB0BAI9P0 S71PL129JB0BAI9P2 S71PL129JB0BAI9P3 S71PL129JB0BAI9U0 S71PL129JB0BAI9U2 S71PL129JB0BAI9U3 S71PL129JB0BAI9Z0 S71PL129JB0BAI9Z2 S71PL129JB0BA
OCR Text ...cured Silicon Sector Protection bits ....................................................40 Figure 3. Secured Silicon Sector Protect Verify ...................... 41 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . .9 ...
Description Stacked Multi-Chip Product (MCP) Flash Memory

File Size 1,553.81K  /  149 Page

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    GLT625608 GLT625608-10FB GLT625608-70FB GLT625608-70TC GLT625608-10J3 GLT625608-10TC GLT625608-10TS GLT625608-70J3 GLT62

Electronic Theatre Controls, Inc.
ETC
N.A.
List of Unclassifed Manufacturers
Part No. GLT625608 GLT625608-10FB GLT625608-70FB GLT625608-70TC GLT625608-10J3 GLT625608-10TC GLT625608-10TS GLT625608-70J3 GLT625608-70TS
OCR Text ... organized as 32,768 words by 8 bits and operates from a single 5 volt supply. Inputs and Low power consumption: GLT625608 -4...8m(EDO) 81 : 8m(FPM) 160 : 16M(EDO) 161 : 16M(FPM) 08 CONFIG. 04 : x04 08 : x08 16 : x16 32 : x3...
Description 32K x 8 SLOW SPEED CMOS STATIC RAM 32K的8低速的CMOS静态RAM
Time-Delay Relay; Contacts:SPST-NO; Time Range:1 sec. to 100 sec.; Timing Function:Delay-On-Release; Contact Carry Current:2A; Relay Terminals:Quick Connect; Supply Voltage:120VAC
Time-Delay Relay; Contacts:SPST-NO; Time Range:1 to 100 min.; Timing Function:Delay-On-Make; Contact Carry Current:1A; Relay Terminals:Quick Connect; Supply Voltage:120VAC

File Size 1,000.02K  /  13 Page

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    K4S511632C K4S511632C-KC K4S511632C-L1H K4S511632C-L1L K4S511632C-L75 K4S511632C-L7C K4S511632C-KC_L75 K4S511632C-KC_L1H

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S511632C K4S511632C-KC K4S511632C-L1H K4S511632C-L1L K4S511632C-L75 K4S511632C-L7C K4S511632C-KC_L75 K4S511632C-KC_L1H K4S511632C-KC_L1L K4S511632C-KC_L7C K4S511632C-KC/L1H K4S511632C-KC/L1L K4S511632C-KC/L75 K4S511632C-KC/L7C
OCR Text ... The K4S511632C is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608words by 16bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use ...
Description 8m x 16Bit x 4 Banks Synchronous DRAM Data Sheet
DDP 512Mbit SDRAM 12兆内

File Size 130.41K  /  11 Page

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    K4S511632M K4S511632M-TC K4S511632M-TL1H K4S511632M-TL1L K4S511632M-TL75

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S511632M K4S511632M-TC K4S511632M-TL1H K4S511632M-TL1L K4S511632M-TL75
OCR Text ... The K4S511632M is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMS...8m x 16 8m x 16 8m x 16 8m x 16 Refresh Counter Output Buffer Row Decoder Sense AMP Row ...
Description 512Mbit SDRAM

File Size 110.24K  /  11 Page

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