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Cypress Semiconductor Corp.
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| Part No. |
CY7C1353B-40AC CY7C1353B-50BGC CY7C1353B-50AC CY7C1353B-66BGC
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| OCR Text |
...w, the i/o pins are allowed to behave as outputs. when deasserted high, i/o pins are three-stated, and act as input data pins. oe is masked during the data portion of a write sequence, during the first clock when emerging from a deselec... |
| Description |
256Kx18 Flow-Through SRAM with NoBL Architecture
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| File Size |
444.79K /
15 Page |
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it Online |
Download Datasheet
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Cypress
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| Part No. |
CY7C1334F-133AC
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| OCR Text |
...ow, the i/o pins are allowed to behave as outputs. when deasserted high, i/o pins are three-stated, and act as input data pins. oe is masked during the data portion of a write se- quence, during the first clock when emerging from a de s... |
| Description |
2-Mbit (64K x 32) Pipelined SRAM with NoBL(TM) Architecture
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| File Size |
255.08K /
14 Page |
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it Online |
Download Datasheet |
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Cypress
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| Part No. |
CY7C1333F-100AC
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| OCR Text |
...ow, the i/o pins are allowed to behave as outputs. when deasserted high, i/o pins are three-stated, and act as input data pins. oe is masked during the data portion of a write sequence, during the first clock when emerging from a desel... |
| Description |
2-Mbit (64K x 32) Flow-through SRAM with NoBL(TM) Architecture
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| File Size |
303.00K /
13 Page |
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it Online |
Download Datasheet |
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Cypress Semiconductor Corp.
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| Part No. |
CY7C1214F CY7C1214F-100AC
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| OCR Text |
...us pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins. OE is masked during the first clock of a Read cycle when emerging from a deselected state. InputAdvance Input si... |
| Description |
1-Mb (32K x 32) Flow-Through Sync SRAM
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| File Size |
286.23K /
15 Page |
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it Online |
Download Datasheet |
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Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
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| Part No. |
CY7C1334-80AC CY7C1334-133AC CY7C1334-50AC
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| OCR Text |
...OW, the I/O pins are allowed to behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins. OE is masked during the data portion of a write sequence, during the first clock when emerging from a deselected... |
| Description |
x32 Fast Synchronous SRAM X32号，快速同步SRAM
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| File Size |
193.15K /
12 Page |
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it Online |
Download Datasheet |
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Vishay Intertechnology,Inc.
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| Part No. |
AN701
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| OCR Text |
... the pre-regulator circuit will behave just like a linear regulator with 9.2-V output and 10-kW series resistance. In this case, the parameters to be considered are the dropout voltage at lowest line condition and the power dissipation at h... |
| Description |
Designing High-Frequency DC-to-DC Converters With the Si9114A Switchmode Controller
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| File Size |
1,108.56K /
19 Page |
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it Online |
Download Datasheet |
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ATMEL CORP
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| Part No. |
AT49SN6416-70CJ
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| OCR Text |
...chronous reads, the device will behave like a standard asynchronous flash memory. in the page mode, the avd signal can be tied to gnd or can be pulsed low to latch the page address. in both cases the clk can be tied to gnd. the at49sn641... |
| Description |
4M X 16 FLASH 1.8V PROM, 70 ns, CBGA56
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| File Size |
593.43K /
42 Page |
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it Online |
Download Datasheet |
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