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  APT100-101DN Datasheet PDF File

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    APT1004R2BN APT1004RBN

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT1004R2BN APT1004RBN
Description Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:18; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:18-32
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV 1000V 4.4A 4.00 Ohm / 1000V 4.0A 4.20 Ohm

File Size 50.92K  /  4 Page

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HUA FENG CIRCUIT





    APT1004R2KN APT1004RKN

ADPOW[Advanced Power Technology]
Part No. APT1004R2KN APT1004RKN
Description POWER MOS IV 1000V 3.6A 4.00 Ohm / 1000V 3.5A 4.20 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 51.01K  /  4 Page

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    APT1002R4BN APT1002RBN

ADPOW[Advanced Power Technology]
Part No. APT1002R4BN APT1002RBN
Description POWER MOS IV 1000V 7.0A 2.00 Ohm / 1000V 6.5A 2.40 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 50.44K  /  4 Page

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    APT100GF60JU2

Advanced Power Technology
Part No. APT100GF60JU2
Description Boost Chopper - IGBT

File Size 445.36K  /  9 Page

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    Microsemi
Part No. APT10030L2VRG
Description MOSFET

File Size 119.87K  /  4 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT100GF60JU2
Description Boost chopper NPT IGBT

File Size 427.54K  /  9 Page

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    Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
Part No. APT100GF60JU3
Description ISOTOP Buck chopper NPT IGBT 120 A, 600 V, N-CHANNEL IGBT

File Size 428.30K  /  9 Page

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    Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT10021JLL_04 APT10021JLL APT10021JLL04
Description Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4

File Size 151.08K  /  5 Page

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    APT100GT120JR

Microsemi, Corp.
Microsemi Corporation
Part No. APT100GT120JR
Description Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP&#174;; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT

File Size 187.32K  /  6 Page

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    APT1001R1BVFR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Part No. APT1001R1BVFR
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 11A 1.100 Ohm

File Size 70.50K  /  4 Page

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