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For a dd a Found Datasheets File :: 52925 Search Time::2.985ms
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				HITACHI[Hitachi Semiconductor]
Part No.	2SJ386
OCR Text	...0.9 150 -55 to +150 Unit V V a a a W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source ...dd = -30 V -20 V -10 V I D = -3 a Dynamic Input Characteristics V GS (V) Gate to Source Voltage 5...
Description	Silicon P-Channel MOS FET
File Size	37.10K / 7 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ387 2SJ387L 2SJ387S
OCR Text	... 20 150 -55 to +150 Unit V V a a a W C C 2 2SJ387(L), 2SJ387(S) Electrical Characteristics (Ta = 25C) Item Drain to source breakd...dd = -5 V -10 V -15 V V DS Vdd = -5 V -10 V -15 V V GS 0 Switching Characteristics 1000 t d(off) ...
Description	Silicon P-Channel MOS FET
File Size	46.71K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ450
OCR Text	...1 1 150 -55 to +150 Unit V V a a a W C C Notes: 1. PW 100 s, duty cycle 10% 2. When using aluminium ceramic board (12.5 x 20 x 70 mm...dd = -10 V -25 V -50 V 0 Switching Characteristics 200 100 Switching Time t (ns) 50 t d(off) tf t...
Description	Silicon P-Channel MOS FET
File Size	43.82K / 9 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SJ451
OCR Text	...150 150 -55 to +150 Unit V V a a mW C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source b...dd = -10 V PW = 50 s, duty < 1 % tf 2 1 0.5 0.2 t d(on) tr t d(off) 100 30 Capacitance C (pF) 10 ...
Description	Silicon P-Channel MOS FET
File Size	39.56K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ452
OCR Text	...150 150 -55 to +150 Unit V V a a mW C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source b...dd = -30 V PW = 5 s, duty < 1 % -0.5 -1 Drain Current I D (a) 0.2 -0.01 -0.02 -0.05 -0.1 -0.2 ...
Description	Silicon P-Channel MOS FET
File Size	39.33K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ471
OCR Text	... 30 150 -55 to +150 Unit V V a a a W C C 2 2SJ471 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Ga...dd = -5 V -10 V -25 V 0 1000 500 Switching Time t (ns) 200 100 50 Switching Characteristics -1...
Description	Silicon P Channel DV-L MOS FET High Speed Power Switching
File Size	46.25K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ479 2SJ479L 2SJ479S
OCR Text	... 50 150 -55 to +150 Unit V V a a a W C C 2 2SJ479(L), 2SJ479(S) Electrical Characteristics (Ta = 25C) Item Drain to source breakd...dd = -10 V Vout td(on) 90% 10% tr td(off) 90% 10% tf Vout Monitor Vin 10% Waveform 5 2SJ479(L)...
Description	Power switching MOSFET Silicon P Channel DV-L MOS FET High Speed Power Switching Silicon P Channel DVL MOS FET High Speed Power Switching
File Size	37.54K / 7 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ483
OCR Text	...typ (at VGS = -10 V, I D = -2.5 a) * 4V gate drive devices. * Large current capacitance ID = -5 a Outline TO-92MOD. D G 3 S ...dd = -5V -10 V -25 V I D = -5 a V GS (V) 0 0 500 Switching Characteristics V GS = -10 V, V dd = -...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	42.73K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ484
OCR Text	a 2nd. Edition Features * Low on-resistance R DS(on) = 0.18 typ. (at V GS = -10V, ID = -1a) * Low drive current * High speed switching * 4...dd = -5 V -10 V -25 V V GS -20 V DS V dd = -5 V -10 V -25 V -8 0 500 Switching Characteristics V ...
Description	Silicon P-Channel MOS FET High Speed Power Switching
File Size	42.55K / 9 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ486
OCR Text	a 2nd. Edition Features * Low on-resistance R DS(on) = 0.5 typ. (at V GS = -4V, ID = -100 ma) * 2.5V gate drive devices. * Small package (...dd = -10 V PW = 5 s, duty < 1 % -0.1 -0.2 Drain Current -0.5 I D (a) -1 Reverse Drain Current vs....
Description	RELaY-.5aMP-DC-6V/DIODE RoHS Compliant: Yes 硅P通道MOS FET的低FrequencyPower开 Silicon P Channel MOS FET Low FrequencyPower Switching Silicon P-Channel MOS FET
File Size	40.30K / 8 Page	View it Online	Download Datasheet

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