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				HITACHI[Hitachi Semiconductor]
Part No.	2SC5050
OCR Text	...- -- 2.0 pF GHz dB dB dB Unit V a ma a Test conditions I C = 10 a, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 ma VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 ma VCE = 5 V, IC = 20 ma, f = 1000 MHz ...
Description	Silicon NPN Epitaxial
File Size	23.65K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SC5051
OCR Text	...- -- 2.0 pF GHz dB dB dB Unit V a ma a Test conditions I C = 10 a, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 ma VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 ma VCE = 5 V, IC = 20 ma, f = 1000 MHz ...
Description	Silicon NPN Epitaxial
File Size	23.89K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SC5078
OCR Text	...0.8 -- 20 2.5 pF GHz dB dB Unit a ma a Test conditions VCB = 15 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 10 ma VCB = ...250 DC Current Transfer Ratio h FE VCE = 5V DC Current Transfer Ratio vs. Collector Current 200 ...
Description	Silicon NPN Epitaxial
File Size	44.24K / 7 Page	View it Online	Download Datasheet

				http:// PANASONIC[Panasonic Semiconductor] Panasonic Corporation
Part No.	2SC829 2SC829B 2SC829C
OCR Text	...50 -25C 100 Base current IB (a) 80 60 40 25C 0.1 Ta=75C 20 -25C 0.03 0.01 0.1 50 0 0 0.6 1.2 1.8 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Base to emitter voltage VBE (...
Description	Silicon NPN epitaxial planer type(For high-frequency amplification) TRaNSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 30Ma I(C) \| TO-92 Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-adjustable Reset Timeout Delay
File Size	54.87K / 3 Page	View it Online	Download Datasheet

				http:// PANASONIC[Panasonic Semiconductor]
Part No.	2SD1010
OCR Text	...Hz mV min typ max 100 1 Unit na a V V V *h FE Rank classification R 400 ~ 800 S T hFE 600 ~ 1200 1000 ~ 2000 Rank 1 Trans...250 VCE=10V fT -- I E VCB=10V Ta=25C Forward current transfer ratio hFE 1500 Transition...
Description	Silicon NPN epitaxial planer type(For low-frequency amplification)
File Size	37.40K / 2 Page	View it Online	Download Datasheet

				Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
Part No.	2SD1030
OCR Text	... 2 +0.1 1.45 Unit na a V V V 50 40 15 400 1000 0.05 120 2000 0.2 VCE(sat) V MHz *h FE Rank classification Rank...250 VCE=10V fT -- I E VCB=10V Ta=25C Forward current transfer ratio hFE 1500 Transition...
Description	Silicon NPN epitaxial planer type(For low-frequency amplification) 50 ma, 40 V, NPN, Si, SMaLL SIGNaL TRaNSISTOR, TO-236
File Size	36.07K / 2 Page	View it Online	Download Datasheet

				http:// PANASONIC[Panasonic Semiconductor]
Part No.	2SD1051
OCR Text	... 150 -55 ~ +150 1cm2 Unit V V V a a W C C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg EIaJ:S...250 Transition frequency fT (MHz) 1 3 10 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75...
Description	Silicon NPN epitaxial planer type(For low-frequency power amplification)
File Size	39.28K / 2 Page	View it Online	Download Datasheet

				Fuji Electric Panasonic Semiconductor
Part No.	2SD1119
OCR Text	... 150 -55 ~ +150 1cm2 Unit V V V a a W C C 1:Base 2:Collector 3:Emitter EIaJ:SC-62 Mini Power Type Package marking Symbol VCBO VCEO VEBO...250 200 150 100 50 0 - 0.01 - 0.03 - 0.1 - 0.3 100 Cob -- VCB Collector output capacitance Cob (...
Description	Silicon NPN epitaxial planer type(For low-frequency power amplification0
File Size	37.58K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SD1137
OCR Text	...0 150 -45 to +150 Unit V V V a a W W C C 2SD1137 Electrical Characteristics (Ta = 25C) Item Symbol Min 100 4 -- -- 50 25 Collector t...250 350 1.0 V Unit V V a a Test conditions I C = 10 ma, RBE = I E = 1 ma, IC = 0 VCE = 80 V, RBE = ...
Description	Silicon NPN Transistor Silicon NPN Triple Diffused
File Size	30.23K / 5 Page	View it Online	Download Datasheet

				Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
Part No.	2SD1198 2SD1198a
OCR Text	...e Storage temperature * V V a a W C C 200 E B 1:Base 2:Collector 3:Emitter EIaJ:SC-71 M Type Mold Package Internal Connection C ...250.05 s absolute Maximum Ratings 0.550.1 0.450.05 max 100 100 100 4.10.2 Forward ...
Description	Silicon NPN epitaxial planer type darlington 1000 ma, 25 V, NPN, Si, SMaLL SIGNaL TRaNSISTOR
File Size	50.59K / 2 Page	View it Online	Download Datasheet

For a 250 Found Datasheets File :: 207978 Search Time::6.344ms
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