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890-1000 Datasheet PDF File

For 890-1000 Found Datasheets File :: 2560 Search Time::1.109ms
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				ADPOW[Advanced Power Technology]
Part No.	APT10026L2LL
OCR Text	...A AN OR DV NF A I 38 152 30 40 890 7.12 300 38 50 (Repetitive and Non-Repetitive) 1 4 1000 Volts Watts W/C C Amps mJ -55 to 150 3200 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characte...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	51.49K / 2 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IPD04N03LA IPU04N03LA
OCR Text	...IEC 68-1 1) Value 50 50 350 890 6 20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 C3) I D=40 A, R GS=25 I D=50 A,...1000 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 10 limited by on-st...
Description	Low Voltage MOSFETs - OptiMOS Power MOSFET, 25V, TO251, RDSon = 4.0mOhm, 50A, LL OptiMOS 2 Power-Transistor
File Size	345.98K / 10 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IPF04N03LA
OCR Text	..., T j,max=175 C Value 50 50 350 890 6 20 115 -55 ... 175 55/175/56 mJ kV/s V W C Unit A Rev. 1.3 page 1 2003-12-19 IPF04N03LA P...1000 1 s 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 10 limited by ...
Description	Low Voltage MOSFETs - OptiMOS Power MOSFET, 25V, Reverse D-PAK, RDSon = 4.1mOhm, 50A, LL OptiMOS 2 Power-Transistor
File Size	197.28K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	IPS04N03LA IPU04N03LA IPD04N03LA IPF04N03LA
OCR Text	..., T j,max=175 C Value 50 50 350 890 6 20 115 -55 ... 175 55/175/56 mJ kV/s V W C Unit A Rev. 1.8 page 1 2004-05-19 IPD04N03LA IP...1000 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 10 limited by on-st...
Description	OptiMOS 2 Power-Transistor
File Size	431.13K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFPC50LC
OCR Text	...--- --- --- 590 4.5 11 A 44 1.4 890 6.8 V ns C Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, I S = ...1000 4 Coss 0 1 Crss 10 100 A 0 0 20 40 FOR TEST CIRCUIT SEE FIGURE 13 A 60 80 ...
Description	Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A)
File Size	282.67K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor] Motorola, Inc
Part No.	MC10198 MC10198FN MC10198L MC10198P ON0602
OCR Text	... 3 2 3 2 3 0.5 -1.060 -1.060 -1.890 -1.890 -1.080 -1.080 -1.655 -1.655 -0.890 -0.890 -1.675 -1.675 -30C Min Max 110 415 350 560 0.5 -0.960 -...1000 pF 0.01 F CExt - TIMING CAPACITANCE FIGURE 1 -- FIGURE 3 -- RECOVERY TIME versus CExt @ I...
Description	From old datasheet system Monostable Multivibrator
File Size	149.62K / 10 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10052
OCR Text	...1.088 1.039 0.993 0.957 0.922 0.890 0.859 0.827 0.794 Mag 0.006 0.005 0.005 0.005 0.004 0.004 0.004 0.004 0.003 0.003 0.003 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.003 0.003 0.003 0.003 0.003 0.004 0.00...
Description	35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
File Size	497.70K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10133
OCR Text	... 10 40 860 865 870 875 880 885 890 895 900 Efficiency 4 0 -20 860 865 870 875 880 885 890 895 900 Frequency (MHz) Frequency (MH...1000.0 IDQ = 250 VDD = 28 V f = 894 MHz Output Power (Watts-PEP) Output Power (Watts) *...
Description	85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85瓦，860-960兆赫GOLDMOS场效应晶体管 85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
File Size	176.20K / 6 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTF10135
OCR Text	...0.903 0.860 0.873 0.873 0.891 0.890 0.904 0.896 0.932 0.932 0.950 0.955 0.959 0.945 0.946 0.949 0.953 0.946 S21 Ang -58 -115.5 -128.2 -138.1 -148.6 -154.5 -159.3 -162.8 -166.9 -169.6 -173.1 -174.7 -177.4 179.2 175.8 171.8 167.4 164.0 16...
Description	5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor
File Size	244.79K / 6 Page	View it Online	Download Datasheet

				AD[Analog Devices] Analog Devices, Inc.
Part No.	AD595A AD595AD AD595AQ AD595C AD595CD AD595CQ AD594CQ AD594AQ AD595 AD594CD AD594A AD594 AD594AD AD594C AD595CDZ
OCR Text	...40 460 480 Type J Voltage mV -7.890 -7.402 -6.821 -6.159 -5.426 -4.632 -3.785 -2.892 -1.960 -.995 -.501 0 .507 1.019 1.277 1.536 2.058 2.585...1000 1020 1040 1060 1080 1100 1120 1140 1160 1180 1200 1220 1240 1250 Type J Voltage mV 27.388 28.51...
Description	Monolithic Thermocouple Amplifier with Cold Junction Compensation Pretrimmed for Type K Thermocouples Monolithic Thermocouple Amplifier with Cold Junction Compensation Pretrimmed for Type J Thermocouples Monolithic Thermocouple Amplifiers with Cold Junction Compensation 单片放大器热电偶冷端补偿
File Size	136.49K / 8 Page	View it Online	Download Datasheet

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