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Cypress Semiconductor Corp.
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| Part No. |
CY7C0240411 CY7C025-55JXC CY7C025-55JXI CY7C025 CY7C024 CY7C0251 CY7C0241
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| OCR Text |
... Master or Slave * Available in 84-pin Lead (Pb)-free PLCC, 84-pin PLCC, 100-pin Lead (Pb)-free TQFP, and 100-pin TQFP
Functional Descrip...63 23 62 24 61 25 60 26 59 27 58 28 57 29 56 30 55 31 54 32 33 34 35 36 37 38 39 40 41 42 43 44 45 4... |
| Description |
4K x 18 Dual-PortStatic RAM with Sem, Int, Busy(带Sem, Int, Busy输入端的K x 18 双端口静RAM) 4K的18双PortStatic RAM的扫描电镜，廉政，忙（带扫描电镜，廉政，忙输入端的的4K的18双端口静态RAM）的
8K x 18 Dual-Port Static RAM with Sem, Int, Busy(带Sem, Int, Busy输入端的K x 18 双端口静RAM)
4K x 16 Dual-Port Static RAM with Sem, Int, Busy(带Sem, Int, Busy输入端的K x 16 双端口静RAM)
8K x 16 Dual-PortStatic RAM with Sem, Int, Busy(带Sem, Int, Busy输入端的K x 16 双端口静RAM)
4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, BUSY
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| File Size |
366.46K /
21 Page |
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Linear Technology, Corp.
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| Part No. |
GMM77332280CNTG GMM77316280CTG
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| OCR Text |
...3 74 75 76 77 78 79 80 81 82 83 84 pin symbol 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 1...63 v ss dq 64 dq 65 dq 66 dq 67 v cc dq 68 dq 69 dq 70 dq 71 v ss pd 2 pd 4 pd 6 pd 8 id 1 v cc ... |
| Description |
32Mx72|3.3V|5/6|x36|FP/EDO DRAM - 256MB Buffered DIMM 32Mx72 | 3.3 | 5 / 6 | x36 |计划生育/ EDO公司的DRAM - 256MB的缓冲DIMM
16Mx72|3.3V|5/6|x 18|FP/EDO DRAM - 128MB Buffered DIMM
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| File Size |
405.51K /
27 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRFG35010N
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| OCR Text |
...s, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power -- 900 mW Power Gain -- 10 dB Efficiency --...63 172.90 172.09 171.29 170.57 169.71 168.85 168.20 167.07 166.35 163.30 162.54 161.81 161.17 160.55... |
| Description |
RF Power Field Effect Transistor
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| File Size |
181.50K /
12 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MRFG35003MT1
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| OCR Text |
...ts, IDQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power -- 300 mWatt Power Gain -- 11.5 dB Efficien...63 170.20 168.97 167.17 165.98 162.45 161.17 160.09 159.00 157.85 156.84 155.94 154.93 154.05 153.24... |
| Description |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
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| File Size |
331.39K /
8 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MRFG35003M6T1
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| OCR Text |
...A @ 0.01% Probability, 64 CH, 3.84 MCPS)
ACPR
--
-42
-38
dBc
MRFG35003M6T1 2
For More Information On This Product, Go t...63 170.90 170.06 169.23 168.58 167.47 166.77 163.72 162.94 162.21 161.60 160.97 160.44 159.95 159.46... |
| Description |
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT
GALLIUM ARSENIDE PHEMT
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| File Size |
325.84K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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