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IRF[International Rectifier]
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| Part No. |
JANSF2N7389 IRHF9130 IRHF93130 JANSR2N7389
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| OCR Text |
...A VDS >-15V, IDS = -4.1A VDS= -80v ,VGS=0V VDS = -80v, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-12V, ID = -6.5A VDS = -50V VDD = -50V...0.112 -- Voltage RDS(on) Static Drain-to-Source On-State -- -- 0.30 Resistance -- -- 0.35 VGS(th) Ga... |
| Description |
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
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| File Size |
125.31K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRHG93110 IRHG9110 IRHG9110P
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| OCR Text |
... VDS > -15V, IDS = -0.5a VDS= -80v, VGS= 0V VDS = -80v, VGS = 0V, TJ =125C VGS = - 20V VGS = 20V VGS = -12V, ID = -0.75A, VDS = -50V VDD = -50V, ID = -0.75A, VGS = -12V, RG = 24
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gat... |
| Description |
100V Quad P-Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Quad P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)
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| File Size |
118.84K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHE93130 IRHE9130 JANSR2N7389U JANSF2N7389U
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| OCR Text |
... VDS > -15V, IDS = -4.1A VDS= -80v,VGS=0V VDS = -80v VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS = -12V, ID = -6.5A VDS = -50V VDD = -50V,...0 250 0.74
Test Conditions
A
V nS C Tj = 25C, IS = -6.5A, VGS = 0V Tj = 25C, IF = -6.5A, di/... |
| Description |
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a 18-pin LCC package
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a 18-pin LCC package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
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| File Size |
119.74K /
8 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRF7350PBF
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| OCR Text |
...80 V, VGS = 0V, TJ = 70C VDS = -80v, VGS = 0V, TJ = 70C VGS = 20V N-Channel ID = 2.1A, VDS = 80v, VGS = 10V P-Channel ID = -1.5A, VDS = -80...0 -- -- 1.3 TJ = 25C, IS = 1.8A, VGS = 0V V -- -- -1.6 TJ = 25C, IS = -1.4A, VGS = 0V -- 72 110 ns... |
| Description |
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
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| File Size |
305.61K /
16 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
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| Part No. |
FS10ASJ-3
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| OCR Text |
... Reverse recovery time
VDD = 80v, ID = 5A, VGS = 10V, RGEN = RGS = 50
IS = 5A, VGS = 0V Channel to case IS = 10A, dis/dt = -100A/s
...0
0
50
100
150
200
100 7 TC = 25C 10ms 5 Single Pulse DC 3 2 3 5 7 101 2 3 5 7 102... |
| Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
41.67K /
4 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
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| Part No. |
FS10AS-3
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| OCR Text |
... Reverse recovery time
VDD = 80v, ID = 5A, VGS = 10V, RGEN = RGS = 50
-- -- -- -- -- --
IS = 5A, VGS = 0V Channel to case IS = 10A,...0
0
50
100
150
200
100 7 TC = 25C 10ms 5 Single Pulse DC 3 2 3 5 7 101 2 3 5 7 102... |
| Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
41.02K /
4 Page |
View
it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FS10AS-3
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| OCR Text |
... Reverse recovery time
VDD = 80v, ID = 5A, VGS = 10V, RGEN = RGS = 50
-- -- -- -- -- --
IS = 5A, VGS = 0V Channel to case IS = 10A,...0
0
50
100
150
200
100 7 TC = 25C 10ms 5 Single Pulse DC 3 2 3 5 7 101 2 3 5 7 102... |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
36.07K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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