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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT24M120B2
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| OCR Text |
...F
5
VGS = 0V, VDS = 0V to 800v
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge ...12a, VDS = 600V Resistive Switching VDD = 800v, ID = 12a RG = 2.2 6 , VGG = 15V
125 260 42 120 45... |
| Description |
N-Channel MOSFET
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| File Size |
393.63K /
4 Page |
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it Online |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
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| Part No. |
APT8075BVFR_05 APT8075BVFR APT8075BVFR05
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| OCR Text |
800v 12a 0.750
POWER MOS V (R)
FREDFET
TO-247
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the o... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
60.98K /
4 Page |
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it Online |
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SEME-LAB[Seme LAB]
TT electronics Semelab Limited
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| Part No. |
BUL52B BUL52
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| OCR Text |
... 341927. Fax (01455) 552612.
800v 400V 10V 8A 12a 4A 100W -55 to +150C
Prelim. 3/95
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated)
Parameter
VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO
SEME
BUL52B
Tes... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
19.27K /
2 Page |
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it Online |
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
BUL53BSMD
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| OCR Text |
...USED DIE * HIGH VOLTAGE (VCBO = 800v) * FAST SWITCHING (tf = 100ns) * HIGH ENERGY RATING
0 .7 6 (0 .0 3 0 ) m in .
1 6 .0 2 (0 .6 3 1 ...12a 20A 3A 60W 3.0C/W 200C -55 to +200C
Prelim. 7/00
Semelab plc.
BUL53BSMD
ELECTRICAL CHA... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
20.29K /
2 Page |
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it Online |
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
BUL62B
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| OCR Text |
... 341927. Fax (01455) 552612.
800v 400V 10V 8A 12a 4A 25W -55 to +150C
Prelim. 3/95
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated)
Parameter
VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO
SEME
BUL62B
Test... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
19.21K /
2 Page |
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it Online |
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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
BUL98
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| OCR Text |
...t (IB =0) Test Conditions VCE = 800v VCE = 800v VCE = 450V L = 25mH 450 9 _ _ IB =1A _ _ IB =1.8A __ _ IB =2.4A _ _ IB =1A _ _ IB =1.8A __ _...12a IC =5A IC =9A IC =12a IC =10mA IC =5A VCL =350V VBE(off) =-5V L =200H (see figure 8) VCL =350V V... |
| Description |
High voltage fast-switching NPN power transistor
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| File Size |
195.55K /
10 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRGB5B120KD
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| OCR Text |
...ns 23 38 IC = 6.0A 5.6 nC VCC = 800v CT1 20 VGE = 15V CT4 440 J IC = 6.0A, VCC = 600V 440 VGE = 15V,RG = 50, L =3.7mH 880 Ls = 150nH TJ = 25...12a ICE = 24A
VCE (V)
18 16 14 12 10 8 6 4 2
ICE = 6.0A ICE = 12a ICE = 24A
12 10 8 6 4 2 ... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
222.92K /
12 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRPT2059A
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| OCR Text |
... bridge rectifiers are rated at 800v. The inverter section uses 600V, short circuit rated, ultrafast IGBTs and ultrafast freewheeling diodes...12a rms 150% overload for 1 minute 425V maximum 14.4A 50kOhms 5% 3.1kOhms 10% 45mOhms 5% 10 s 36A pe... |
| Description |
Power Module for 2 hp Motor Drives
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| File Size |
307.82K /
12 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE2309
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| OCR Text |
.... . . . . . . . . . . . . . . . 800v Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...12a Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... |
| Description |
Silicon NPN Transistor High Voltage, High Current Switch
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| File Size |
22.24K /
2 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE2365
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| OCR Text |
.... . . . . . . . . . . . . . . . 800v Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....12a Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... |
| Description |
12 A, 800 V, NPN, Si, POWER TRANSISTOR
Silicon NPN Transistor High Voltage Horizontal Deflection Output
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| File Size |
21.46K /
2 Page |
View
it Online |
Download Datasheet |
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