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IBM Microeletronics
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| Part No. |
IBM0418A81QLAB IBM0418A41QLAB
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| OCR Text |
... 36 256K x 36 256K x 36 Speed 1.7ns Access / 3.0ns Cycle 2.0ns Access / 4.0ns Cycle 2.25ns Access /5.0ns Cycle 1.7ns Access / 3.0ns Cycle 2.0ns Access / 4.0ns Cycle 2.25ns Access /5.0ns Cycle 1.7ns Access / 3.0ns Cycle 2.0ns Access / 4.0ns ... |
| Description |
8Mb (512 x 18) SRAM(8M( 512x 18 ) 同步流水线式高性能CMOS静态RAM)
4Mb (256K x 18) SRAM(4M( 256Kx 18) 同步流水线式高性能CMOS静态RAM)
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| File Size |
20.67K /
5 Page |
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| Part No. |
KFG1216U2M-DIB00 KFG1216D2M-DCB00
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| OCR Text |
...eters are changed. tach : 9ns-->7ns, tces : 7ns-->9ns, taavds : 5ns-->7ns tds : 30ns-->10ns, tdh : 0ns-->4ns 5. define new ac parameter. tawes(address hold time in avd low case of asynchronous write mode) min. 0ns 1. correct an errata ball ... |
| Description |
32M X 16 FLASH 2.7V PROM, 76 ns, PBGA63
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| File Size |
312.47K /
76 Page |
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IBM Microeletronics
International Business Machines, Corp.
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| Part No. |
IBM0418A8ACLAB IBM0436A4ACLAB
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| OCR Text |
... 18 512K x 18 512K x 18 Speed 3.7ns Access / 3.8ns Cycle 4.2ns Access / 4.2ns Cycle 4.3ns Access / 4.3ns Cycle 4.5ns Access / 4.5ns Cycle 5.0ns Access / 5.0ns Cycle 5.5ns Access /5.5ns Cycle 3.7ns Access / 3.8ns Cycle 4.2ns Access / 4.2ns C... |
| Description |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )寄存器锁存模式的同步CMOS静态RAM)
4Mb( 128K x 36 ) SRAM(4Mb( 128K x 36 )寄存器锁存模式的同步CMOS静态RAM) 4Mb的（128K的36）的SRAMMb的（128K的36）寄存器锁存模式的同步的CMOS静态RAM）的
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| File Size |
29.76K /
6 Page |
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Samsung Electronic
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| Part No. |
K4S56163LC-RFR
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| OCR Text |
...6.5ns in case of -1L part, from 7ns to 7.5ns in case of -15 part. * Change of tOH from 3ns to 3.5ns. * Change V IH min. from 1.44V to 0.8xV DDQ and V OH min. from 1.6V to 0.9xV DDQ
Revision 0.3 (October 6. 2001, Preliminary)
* Changed D... |
| Description |
4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP Data Sheet
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| File Size |
701.92K /
49 Page |
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Samsung Electronic
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| Part No. |
K4S28163LD-RFR
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| OCR Text |
...6.5ns in case of -1L part, from 7ns to 7.5ns in case of -15 part. * Changed of tOH from 3ns to 2.5ns. * Changed V IH min. from 1.44 V to 0.8xV DDQ and VOH min. from 1.6V to 0.9 x VDDQ.
Revision 0.6 (October 10. 2001, Preliminary)
* Chan... |
| Description |
2M x 16Bit x 4 Banks SDRAM in 54CSP Data Sheet
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| File Size |
97.04K /
12 Page |
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Linear
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| Part No. |
LT1394 1394I
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| OCR Text |
7ns, Low Power, Single Supply, Ground-Sensing Comparator
FEATURES
s s s s s s s s s s s
DESCRIPTION
May 1998
Ultrafast: 7ns Low Power: 6mA Low Offset Voltage: 0.8mV Operates Off Single 5V or Dual 5V Supplies Input Common Mode E... |
| Description |
7ns, Low Power, Single Supply, Ground-Sensing Comparator
From old datasheet system
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| File Size |
165.93K /
4 Page |
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