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SMCJ110C OM6018SA PDN27A90 2N6577 MAS9178 HCF4051 MCP602 CSL13003
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  76.7 Datasheet PDF File

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    AH1802-SNG-7 AH1802-FJG-7-01 AH1802-WG-7 AH1802-FY4G-7 AH180210 AH1802-FJG-7

Diodes, Inc.
Diodes Inc.
Diodes Incorporated
Part No. AH1802-SNG-7 AH1802-FJG-7-01 AH1802-WG-7 AH1802-FY4G-7 AH180210 AH1802-FJG-7
OCR Text ... Pin#1 ID 1.95/2.075 0.76/0.96 C L C L 0.65nom. 0.2/0.3 C L 0.37 0.05 M C A B Bottom View 1.67 Land P...7/0.9 Hall Sensor C L (Pin #1) 0.50 0.50 1.0/1.2 Land Pattern Recommendation (Uni...
Description Micropower, Ultra-Sensitive Omnipolar Hall-Effect Switch
MAGNETIC FIELD SENSOR-HALL EFFECT, 1-4mT, 0.30V, RECTANGULAR, SURFACE MOUNT
MAGNETIC FIELD SENSOR-HALL EFFECT, 1-4mT, 0.30V, SQUARE, SURFACE MOUNT 2 X 2 MM, GREEN, DFN-6

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    SL4-7-50 SL4-4P5-50 SL4-15-50 SL4-2-50 SL4-9-50 SL4-2P5-50 SL4-3-50 SL4-30-50 SL4-40-50 SL4-4-50 SL4-5-50 SL4-50-50 SL4-

Rhombus Industries Inc.
Part No. SL4-7-50 SL4-4P5-50 SL4-15-50 SL4-2-50 SL4-9-50 SL4-2P5-50 SL4-3-50 SL4-30-50 SL4-40-50 SL4-4-50 SL4-5-50 SL4-50-50 SL4-6-50 SL4-7P5-50 SL4-1-50 SL4-12-50 SL4-16-50 SL4-25-50 SL4-35-50 SL4-3P5-50 SL4-10-50 SL4-11-50 SL4-13-50 SL4-14-50 SL4-1P5-50 SL4-20-50 SL4-8-50
OCR Text ...) MAX. .275 (6.99) MAX. .030 (0.76) TYP. .020 (0.51) TYP. .400 (10.16) .100 (2.54) TYP. .120 (3.05) MIN. .200 (5.08) MAX. Physical Dimensions inches (mm) .010 (0.25) TYP. . RHOMBUS P/N: CUST P/N: DATE: 01/09/98 50 Ohm SL4 Ser...
Description SL4 Series Single-In-Line Passive Single Output 50 W Impedance Delays

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    MMBZ10VAL-7-F MMBZ5V6AL-7-F MMBZ5V6AL1 MMBZ9V1AL-7-F MMBZ6V8AL-7-F MMBZ6V2AL-7-F

Diodes Incorporated
Part No. MMBZ10VAL-7-F MMBZ5V6AL-7-F MMBZ5V6AL1 MMBZ9V1AL-7-F MMBZ6V8AL-7-F MMBZ6V2AL-7-F
OCR Text ...2) VC V 8.7 9.6 14 14.2 IPP A 2.76 2.5 1.7 1.7 Typical Temperature Coefficient Tc (%/C) +0.04 +0.045 +0.065 +0.065 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, ...
Description 24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS

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    AH1803-SNG-7 AH1803-WG-7 AH1803

Diodes, Inc.
Diodes Inc.
Diodes Incorporated
Part No. AH1803-SNG-7 AH1803-WG-7 AH1803
OCR Text ... 0.65nom. 0.97/1.04 C L 0.76/0.96 0.2/0.3 0.05 M C A B Bottom View AH1803 Rev. 9 DS31193 7 of 9 www.diodes.com OCTOBER 2009 (c) Diodes Incorporated AH1803 MICROPOWER, ULTRA-SENSITIVE HALL EFFECT SWITCH Taping...
Description MICROPOWER ULTRA-SENSITIVE HALL-EFFECT SENSOR
MAGNETIC FIELD SENSOR-HALL EFFECT, -4-4mT, 0.1-2.8V, RECTANGULAR, SURFACE MOUNT GREEN, SC-59, 3 PIN
MICROPOWER, ULTRA-SENSITIVE HALL EFFECT

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    AH1801-SNG-7 AH1801-WG-7 AH1801-FJG-7 AH180109 AH1801

Diodes Inc.
Diodes Incorporated
Part No. AH1801-SNG-7 AH1801-WG-7 AH1801-FJG-7 AH180109 AH1801
OCR Text ...0.05 M C A B 1.95/2.075 0.76/0.96 R0 .1 2x- 0.15 C 0.65nom. Bottom View AH1801 Rev. 7 9 of 10 www.diodes.com FEBRUARY 2009 (c) Diodes Incorporated AH1801 MICROPOWER, ULTRA-SENSITIVE HALL EFFECT SWITCH Taping...
Description MICROPOWER, ULTRA-SENSITIVE HALL-EFFECT SWITCH
MICROPOWER, ULTRA-SENSITIVE HALL EFFECT

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    Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
Part No. MH16S64APFC-7 MH16S64APFC-7L MH16S64APFC-8 MH16S64APFC-8L
OCR Text ...Q29 DQ30 DQ31 Vss SDA Vcc 74 76 78 80 82 84 86 88 90 92 94 96 98 100 102 104 106 108 110 112 114 116 118 120 122 124 126 128 130 132 134 ...7,-7L,-8,-8L 1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM Block Diagram /S0 /S1 ...
Description 1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM
1 /073 /741 /824-BIT (16 /777 /216 - WORD BY 64-BIT)SynchronousDRAM

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    Diodes
Part No. BSS127S-7
OCR Text ...ransfer admittance |y fs | ? 76 ? ms v ds = 10v, i d = 16ma diode forward voltage v sd ? ? 1.5 v v gs = 0v, i s = 16ma dyna...7.2 ? ns turn-off delay time t d ( off ) ? 28.7 ? ns turn-off fall time t f ? 168 ? ns ...
Description N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

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    DMN10H099SFG-7 DMN10H099SFG-13 DMN10H099SFG DMN10H099SFG-15

Diodes Incorporated
Part No. DMN10H099SFG-7 DMN10H099SFG-13 DMN10H099SFG DMN10H099SFG-15
OCR Text ...state r ? ja 131 c/w t<10s 76 total power dissipation (note 6) t a = +25c p d 2.31 w t a = +70c 1.18 thermal resistance, jun...7) drain-source breakdown voltage bv dss 100 - - v v gs = 0v, i d = 250 a zero gate volt...
Description    Qualified to AEC-Q101 Standards for High Reliability
   100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI?

File Size 254.43K  /  6 Page

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