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http:// MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC41V6472
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| OCR Text |
7.2GHz BAND 12w INTERNALLY MATCHED GaAs FET DESCRIPTION
The MGFC41V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees... |
| Description |
6.4 ~ 7.2GHz BAND 12w INTERNALLY MATCHED GaAs FET
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| File Size |
184.81K /
2 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC41V7177
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| OCR Text |
7.1 - 7.7GHz BAND 12w INTERNALLY MATCHED GaAs FET DESCRIPTION
The MGFC41V7177 is an internally impedence matched GaAs power FET especially designed for use in 7.1 - 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package gua... |
| Description |
7.1 - 7.7GHz BAND 12w INTERNALLY MATCHED GaAs FET
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| File Size |
221.92K /
3 Page |
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it Online |
Download Datasheet
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ST Microelectronics
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| Part No. |
AM81214-060
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| OCR Text |
...VCC = 28V
55 50 6.6
63 57 7.2
-- -- --
W % dB
Pulse Width Duty Cycle
2/6
AM81214-060
TYPICAL PERFORMANCE TYPICAL BROADBAND POWER AMPLIFIER
RELATIVE POWER OUTPUT & COLLECTOR EFFICIENCY vs COLLECTOR VOLTAGE
MAXIMU... |
| Description |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
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| File Size |
166.74K /
6 Page |
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it Online |
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Price and Availability
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