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  6a 800v Datasheet PDF File

For 6a 800v Found Datasheets File :: 756    Search Time::1.625ms    
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    2SC3796

Inchange Semiconductor Company Limited
Part No. 2SC3796
OCR Text ...tion voltage i c = 3a; i b = 0.6a b 1.0 v v be( sat ) base-emitter saturation voltage i c = 3a; i b = 0.6a b 1.5 v i cbo collector cutoff current v cb = 800v; i e = 0 100 a i ebo emitter cutoff current v eb = 5v; i ...
Description isc Silicon NPN Power Transistor

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    IRFAG50 IRFAG50-15

International Rectifier
Part No. IRFAG50 IRFAG50-15
OCR Text ...=10V, ID =3.5A VGS = 10V, ID =5.6a VDS = VGS, ID =250mA VDS > 15V, IDS =3.5A VDS=800v, VGS=0V VDS =800v VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS= 10V, ID=5.6a VDS =500V VDD =400V*, ID =5.6a, RG =2.35 Drain-to-Source Breakdown Volta...
Description 1000V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
HEXFET?TRANSISTORS 1000V, N-CHANNEL
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Simple Drive Requirements

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    NTE2597

NTE Electronics
Part No. NTE2597
OCR Text .... . . . . . . . . . . . . . . . 6a Collector Dissipation, PD TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....800v, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.8A VCE = 5V, IC = 4A IC = 6a, IB = 1.2A IC = 6a, IB =...
Description Silicon NPN Transistor High Voltage, High Speed Switch

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    APT12M80B APT12M80S

Microsemi Corporation
Part No. APT12M80B APT12M80S
OCR Text ... 25C, ID = 250A VGS = 10V, ID = 6a VGS = VDS, ID = 1mA VDS = 800v VGS = 0V TJ = 25C TJ = 125C APT12M80B_S Typ 0.87 0.55 4 -10 Max Unit V V/C V mV/C A nA Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coeffic...
Description N-Channel MOSFET

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    KSC5030F

Inchange Semiconductor Company Limited
Part No. KSC5030F
OCR Text ...duct CONDITIONS IC= 3A ; IB2= 0.6a; L= 2mH,Clamped IC= 1mA; IE= 0 IC= 5mA; RBE= IE= 1mA; IC= 0 IC= 3A; IB= 0.6a B KSC5030F MIN 800 1...800v; IE= 0 VEB= 5V; IC=0 IC= 0.4A; VCE= 5V IC= 2A; VCE= 5V IE= 0; VCB= 10V; ftest= 1MHz IC= 0.4A ; ...
Description isc Silicon NPN Power Transistor

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    BUX32

Inchange Semiconductor Company Limited
Part No. BUX32
OCR Text ...itter saturation voltage i c = 6a; i b = 1.2a b 1.0 v v be( sat ) base-emitter saturation voltage i c = 6a; i b = 1.2a b 1.3 v bux32 v ce = 800v;v be = -1.5v v ce = 800v;v be = -1.5v,t c =125 0.1 1.0 bux32a v ce = 900...
Description isc Silicon NPN Power Transistors

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    2SC4429

Inchange Semiconductor Company Limited
Part No. 2SC4429
OCR Text ... .i w VEB= 5V; IC= 0 IC=0.6a ; VCE= 5V IC= 3A ; VCE= 5V .cn mi e 10 8 155 15 IE= 0 ; VCB= 10V; ftest=1.0MHz pF MHz IC= 0.6a ; VCE= 10V Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 6a , IB1=1.2A; ...
Description isc Silicon NPN Power Transistor

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    2SC3460 2SC3460-2014

Quanzhou Jinmei Electronic Co.,Ltd.
Quanzhou Jinmei Electro...
Part No. 2SC3460 2SC3460-2014
OCR Text ...fe operation APPLICATIONS 800v/6a switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VC...
Description Silicon NPN Power Transistors

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    2SC3461

Savantic, Inc.
Part No. 2SC3461
OCR Text ...CB=800v; IE=0 VEB=5V; IC=0 IC=0.6a ; VCE=5V IC=3A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.6a ; VCE=10V 10 8 MIN 800 1100 7 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT 2SC3461 TYP. MAX UNIT V V V 2...
Description Silicon NPN Power Transistors

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    Inchange Semiconductor
Part No. BUX32 BUX32B
OCR Text ...itter saturation voltage i c = 6a; i b = 1.2a b 1.0 v v be( sat ) base-emitter saturation voltage i c = 6a; i b = 1.2a b 1.3 v bux32 v ce = 800v;v be = -1.5v v ce = 800v;v be = -1.5v,t c =125 0.1 1.0 bux32a v ce = 900...
Description Silicon NPN Power Transistor

File Size 105.16K  /  2 Page

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