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  60a 30v Datasheet PDF File

For 60a 30v Found Datasheets File :: 1043    Search Time::1.594ms    
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    INTERSIL[Intersil Corporation]
Part No. HUF75337S3S HUF75337P3 HUF75337G3 FN4369
OCR Text ...DESCENDING ORDER: ID = 75A ID = 60a ID = 40A ID = 20A 40 50 60 Qg, GATE CHARGE (nC) NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT 116 HUF75337G3, HUF75337...
Description 75A/ 55V/ 0.014 Ohm/ N-Channel UltraFET Power MOSFETs
From old datasheet system
75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.014 Ω, N沟道UltraFET功率MOS场效应管)

File Size 105.94K  /  9 Page

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    IRG4PC40S IRG4PC40

IRF[International Rectifier]
Part No. IRG4PC40S IRG4PC40
OCR Text ... VGE = 15V 1.5 IC = 31A -- IC = 60a See Fig.2, 5 V -- IC = 31A , TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = ...30v See Fig. 7 -- = 1.0MHz Q Repetitive rating; VGE = 20V, pulse width limited by max. junction...
Description    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V Vce(on)typ.=1.32V @Vge=15V Ic=31A)
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package

File Size 141.79K  /  8 Page

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    INTERSIL[Intersil Corporation]
Part No. JANSR2N7281 FN4294
OCR Text ...atings from 100V to 500V, 1A to 60a, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) wit...30v, t = 250s Required MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-STD-750, Metho...
Description Radiation Hardened/ N-Channel Power MOSFET
Radiation Hardened, N-Channel Power MOSFET
Radiation Hardened N-Channel Power MOSFET
From old datasheet system

File Size 49.48K  /  7 Page

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    KEC Holdings
KEC[KEC(Korea Electronics)]
Part No. KTA1381
OCR Text ...120A I B =-100A I B =-80A I B =-60a I B =-40A I B =-20A I B =0 I C - VCE -10 -8 -6 -4 -2 0 IB=-60a IB=-50A IB=-40A IB=-30A IB=-20A IB=-...30v C Ob - VCB 50 30 f T =1MHz 100 50 30 10 5 3 10 -0.5 -1 -3 -10 -30 -...
Description EPITAXIAL PLANAR PNP TRANSISTOR (HIGH-DIFFINITION CRT DISPLAY VIDEO OUTPUT)

File Size 396.43K  /  3 Page

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    SKP15N60NBSP SKP15N60

Infineon Technologies AG
Part No. SKP15N60NBSP SKP15N60
OCR Text ... SKW15N60 80A 100A Ic 70A 60a tp=5s 15s IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 10A 50s 50A 40A 30A TC=110C 20A 10A...30v QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 15A) VCE, COLLECTOR-EMITTER VOLTAGE ...
Description SKP15N60, SKB15N60, SKW15N60 Fast S-IGBT in NPT-Technology
From old datasheet system

File Size 299.66K  /  14 Page

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    SSW_I1N60A

Fairchild Semiconductor
Part No. SSW_I1N60a
OCR Text ...C o < < 3 _ O ISD < 1A, di/dt _ 60a/ s, VDD _ BVDSS , Starting T J =25 C _ 4 O Pulse Test : Pulse Width = 250 s, Duty Cycle < 2% 5 Essentially Independent of Operating Temperature O N-CHANNEL POWER MOSFET Fig 1. Output Characteristics ...
Description Advanced Power MOSFET

File Size 253.13K  /  7 Page

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    STP60NF03L 6771

ST Microelectronics
STMicroelectronics
Part No. STP60NF03L 6771
OCR Text 60a TO-220 STripFETTM POWER MOSFET PRELIMINARY DATA T YPE STP60NF03L s s V DSS 30 V R DS(on) < 0.010 ID 60 A TYPICAL RDS(on) = 0.008 LOW THRESHOLD DRIVE DESCRIPTION This Power Mosfet is the latest development of STMicr...
Description N-CHANNEL Power MOSFET
N-CHANNEL 30v - 0.008 - 60a TO-220 STripFET TM POWER MOSFET
From old datasheet system
N-CHANNEL 30v - 0.008 ohm - 60a TO-220 STripFET POWER MOSFET

File Size 45.52K  /  6 Page

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    HUR60120 HUR60100

List of Unclassifed Manufacturers
ETC[ETC]
Sirectifier Semiconductors
Part No. HUR60120 HUR60100
OCR Text ...; VR=VRRM TVJ=150oC; VR=VRRM IF=60a; TVJ=150oC TVJ=25oC Test Conditions Characteristic Values typ. max. 650 2.5 1.74 2.66 0.65 0.25 ...30v; TVJ=25oC VR=100V; IF=130A; -diF/dt=100A/us; TVJ=100 C o 40 7 14.3 A FEATURES * Inter...
Description High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

File Size 240.10K  /  3 Page

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    INFINEON[Infineon Technologies AG]
Part No. SKP06N60 SKB06N60 Q67040-S4230 Q67040-S4231
OCR Text ... TIME 20 s 80A 15 s 60a 10 s 40A 5 s 20A 0 s 10V 0A 10V 12V 14V 16V 18V 20V VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 600V,...
Description Fast S-IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 266.40K  /  13 Page

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    STMicro
Part No. STTA3006PI STTA3006P STTA6006TV2 3176
OCR Text ...FIDENCE Tj=125oC VR=400V IF=60a 100 200 300 400 500 600 700 800 900 1000 3/9 STTA6006TV1/2/ STTA3006P/PI Fig. 5: Reverse recovery time versus dIF/dt. trr(ns) 250 90% CONFIDENCE Tj=125 oC 225 VR= 400V 200 175 I F=60a 150 IF=30...
Description TURBOSWITCH TM ULTRA-FAST HIGH VOLTAGE DIODE
From old datasheet system

File Size 81.07K  /  9 Page

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For 60a 30v Found Datasheets File :: 1043    Search Time::1.594ms    
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