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NXP Semiconductors N.V.
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| Part No. |
BUK98180-100A
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| OCR Text |
...annel trenchmos logic level fet 5. thermal characteristics fig 3. safe operating area; continuous and peak drain currents as a function of drain-source voltage 03nc34 1 10 ? 1 10 10 2 i d (a) 10 ? 2 v ds (v) 10 ? 1 10 3 10 2 110 d.c. r... |
| Description |
N-channel TrenchMOS logic level FET
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| File Size |
154.94K /
13 Page |
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Mitsubishi Electric Corporation
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| Part No. |
FY6ACJ-03A
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| OCR Text |
............................... 6a 5.0 0.4 1.27 1.8 max. 6.0 4.4 ?? ?? ???? source gate drain ? ? ? ? ? ? ?? ? ? ??
sep. 2001 v (br) dss i g...8w t c = 25 c pulse test 8v 3v 4v 6v 5v 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1.0 v gs = 10v p d = 1.... |
| Description |
Power MOSFETs: FY Series
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| File Size |
62.17K /
4 Page |
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MOSA[MOSA ELECTRONICS]
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| Part No. |
MS6863TGTR MS6863TGU MS6863
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| OCR Text |
...FEATURES
Operation range: 2.7V~5.5V Shutdown Current 0.4uA at 5V Output power, THD+N=1% BTL, RL=3, 2.3W at 5V BTL, RL=4, 2W at 5V, 0.8W at 3.3V, 500mW at 2.7V BTL, RL=8, 1.2W at 5V, 0.5W at 3.3V, 350mW at 2.7V SE, RL=8, 300mW at 5V,130mW a... |
| Description |
DUAL 2W POWER AMPLIFIERS / STEREO HEADPHONE LOW VOLTAGE, POP NOISE FREE FUN
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| File Size |
476.71K /
14 Page |
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it Online |
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Price and Availability
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