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Maxim Integrated Produc...
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
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| Part No. |
MAX4368 MAX4367 MAX4366EUA MAX4366 MAX4366EBL-T MAX4366EKA-T MAX4366ETA
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| OCR Text |
...UT = 60mW POUT = 25mW
POUT = 50mW 0.01 POUT = 75mW
POUT = 50mW 0.01 POUT = 75mW POUT = 120mW 0.001
0.01 VCC = 5V AV = 20V/V RL = 16 0.001 10 100 1k FREQUENCY (Hz) 10k 100k
POUT = 120mW 0.001 10 100 1k FREQUENCY (Hz) 10k 100k
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| Description |
330mW, Ultra-Small, Audio Power Amplifiers with Shutdown
"330mW, Ultra-Small, BTL Audio Amp SHDN Fixed 3V/V Gain"
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| File Size |
483.52K /
18 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RA30H1317M_06 RA30H1317M RA30H1317M-101 RA30H1317M06
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| OCR Text |
... T>40% @ VDD=12.5V, VGG=5V, Pin=50mW * Broadband Frequency Range: 135-175MHz * Low-Power Control Current IGG=1mA (typ) at VGG=5V * Module Size: 66 x 21 x 9.88 mm * Linear operation is possible by setting the quiescent drain current with the... |
| Description |
RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
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| File Size |
91.18K /
8 Page |
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it Online |
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hitachi
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| Part No. |
PF0348
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| OCR Text |
...V, VPC = 0V, RL = Rg = 50 Pin = 50mW, VDD = 7.2V, Pout = 6.8W (at Vpc controlled), RL = Rg = 50, Tc = 25C
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35
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38
-- -20 -30
3.0
2nd harmonic distortion 2nd H.D. 3rd harmonic distortion Input VSWR Output power (1) Output ... |
| Description |
From old datasheet system
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| File Size |
27.88K /
4 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RA30H1721M-101 RA30H1721M
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| OCR Text |
... T>40% @ VDD=12.5V, VGG=5V, Pin=50mW * Broadband Frequency Range: 175-215MHz * Low-Power Control Current IGG=1mA (typ) at VGG=5V * Module Size: 66 x 21 x 9.88 mm * Linear operation is possible by setting the quiescent drain current with the... |
| Description |
RoHS Compliance , 175-215MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
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| File Size |
91.23K /
8 Page |
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it Online |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
M68731H 68731H
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| OCR Text |
...2V, Load VSWR<4:1 VDD=9.2V, Pin=50mW, PO=7W (VGG adjust), ZL=20:1
-20 4 No parasitic oscillation No degradation or destroy
Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. 97
MITSUBISHI RF POW... |
| Description |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO
From old datasheet system
SILICON MOS FET POWER AMPLIFIER 150-175MHz 7W FM PORTABLE RADIO
SILICON MOS FET POWER AMPLIFIER / 150-175MHz / 7W / FM PORTABLE RADIO
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| File Size |
27.49K /
3 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RA30H2127M_06 RA30H2127M RA30H2127M-101 RA30H2127M06
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| OCR Text |
... T>40% @ VDD=12.5V, VGG=5V, Pin=50mW * Broadband Frequency Range: 210-270MHz * Low-Power Control Current IGG=1mA (typ) at VGG=5V * Module Size: 66 x 21 x 9.88 mm * Linear operation is possible by setting the quiescent drain current with the... |
| Description |
RoHS Compliance , 210-270MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
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| File Size |
89.74K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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