5.00 03 180 pdf Datasheet P10 Full Text Search --- IC-ON-LINE


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5.00 03 180 Datasheet PDF File

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				NEC Hitachi Semiconductor
Part No.	2SJ217
OCR Text	...rive device Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3P ...00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Be...
Description	Silicon P-Channel MOS FET
File Size	48.19K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ317
OCR Text	....3 63 180 23 500 2860 Max -- -- 5 -1 -1.4 0.7 0.35 -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns I D = -0.2 A*1, Vin = -4 V, RL = 51 ...00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Be...
Description	Silicon P-Channel MOS FET
File Size	37.77K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ319 2SJ319L 2SJ319S
OCR Text	... Channel Dissipation 10 5 1 10 0 s 0 s PW 1 m DC = s 10 O pe m s ra (1 tio sh n (T ot Operation in c ) this area is limited by R...00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Be...
Description	Power switching MOSFET Silicon P-Channel MOS FET
File Size	44.83K / 9 Page	View it Online	Download Datasheet

				Renesas Electronics, Corp. HITACHI[Hitachi Semiconductor]
Part No.	2SJ352 2SJ351
OCR Text	...I D = -3 A, VDS = -10 V*1 VGS = 5 V, VDS = -10 V, f = 1 MHz Unit V Test conditions I D = -10 mA, VGS = 10 V Gate to source breakdown volt...00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Be...
Description	Silicon P-Channel MOS FET 硅P沟道场效应晶体管
File Size	39.26K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ504
OCR Text	...s -50 -10 V -8 V I D (A) -40 -4.5 V -6 V -5 V -4 V -30 -3.5 V -20 -3 V -10 VGS = -2.5 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) 0...00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Be...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	50.21K / 10 Page	View it Online	Download Datasheet

				Renesas Electronics, Corp. HITACHI[Hitachi Semiconductor]
Part No.	2SJ506 2SJ506L 2SJ506S
OCR Text	... (A) 30 -100 -50 -20 -10 -5 -2 -1 -0.5 -0.2 -0.1 10 s Channel Dissipation Drain Current 20 DC =1 Op 10 Ope...00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Be...
Description	Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开 Power switching MOSFET
File Size	49.71K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ531
OCR Text	...V -12 ID (A) -16 -3.5 V -16 -12 Tc = 75C Drain Current -8 -2.5 V -4 VGS = -2 V 0 -2 -4 -6 Drain to Source Voltage -8...00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Be...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	49.99K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ532
OCR Text	...aracteristics -50 -10 V -8 V -4.5 V -50 Typical Transfer Characteristics V DS = -10 V Pulse Test Tc = -25 C 25 C (A) ID Drain Current ...00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Be...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	50.69K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ534
OCR Text	... -12 ID (A) -16 -3.5 V -16 -12 Tc = 75C Drain Current -8 -2.5 V -4 VGS = -2 V 0 -2 -4 -6 Drain to Source Voltage -8...00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Be...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	51.11K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ542
OCR Text	... -12 ID (A) -16 -3.5 V -16 -12 Tc = 75C Drain Current -8 -2.5 V -4 VGS = -2 V 0 -2 -4 -6 Drain to Source Voltage -8...00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Be...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	51.62K / 9 Page	View it Online	Download Datasheet

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