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Advanced Power Electron...
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| Part No. |
AP6N100J
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| OCR Text |
...20 drain current, v gs @ 10v 7.5 storage temperature range drain current, v gs @ 10v 4.7 pulsed drain current 1 30 total power dissipation...48v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate ... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
70.02K /
6 Page |
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it Online |
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Advanced Power Electron...
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| Part No. |
AP6N100JV
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| OCR Text |
...1 30 total power dissipation 12.5 -55 to 150 total power dissipation 1.13 gate-source voltage + 20 drain current, v gs @ 10v 7.5 parameter ...48v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate ... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
68.40K /
6 Page |
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it Online |
Download Datasheet |
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Advanced Power Electron...
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| Part No. |
AP6N100H
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| OCR Text |
... junction-case 10 /w rthj-a 62.5 /w data and specifications subject to change without notice halogen-free product 8.8 parameter rating dra...48v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate ... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
69.76K /
6 Page |
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it Online |
Download Datasheet |
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Advanced Power Electron...
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| Part No. |
AP6N090Y
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| OCR Text |
...sistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice thermal data parameter storage temperature ra...48v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate ... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
105.25K /
6 Page |
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it Online |
Download Datasheet |
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Advanced Power Electron...
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| Part No. |
AP6N090M
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| OCR Text |
... 1 20 total power dissipation 2.5 -55 to 150 operating junction temperature range -55 to 150 thermal data parameter storage temperature rang...48v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate ... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
105.30K /
6 Page |
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it Online |
Download Datasheet |
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Advanced Power Electron...
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| Part No. |
AP6N090LK
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| OCR Text |
...v ds =v gs , i d =250ua 0.8 - 2.5 v g fs forward transconductance v ds =5v, i d =3a - 9 - s i dss drain-source leakage current v ds =48v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge ... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
109.15K /
6 Page |
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it Online |
Download Datasheet |
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Advanced Power Electron...
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| Part No. |
AP6N090K
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| OCR Text |
...ate-source charge v ds =48v - 1.5 - nc q gd gate-drain ("miller") charge v gs =10v - 2 - nc t d(on) turn-on delay time v ds =30v - 5 - ns t r rise time i d =1a - 7 - ns t d(off) turn-off delay time r g =3.3 ? -15- ns t f fall time v gs =10v... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
109.17K /
6 Page |
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it Online |
Download Datasheet |
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Advanced Power Electron...
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| Part No. |
AP6N090G
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| OCR Text |
...ate-source charge v ds =48v - 1.5 - nc q gd gate-drain ("miller") charge v gs =10v - 2 - nc t d(on) turn-on delay time v ds =30v - 5 - ns t r rise time i d =1a - 7 - ns t d(off) turn-off delay time r g =3.3 ? -15- ns t f fall time v gs =10v... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
102.93K /
6 Page |
View
it Online |
Download Datasheet |
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