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  4.900v Datasheet PDF File

For 4.900v Found Datasheets File :: 1765    Search Time::0.86ms    
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    FQA7N90M

Fairchild Semiconductor
Part No. FQA7N90M
OCR Text ...d (Note 1) FQA7N90M 900 7.0 4.4 28 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recover...
Description 900V N-Channel MOSFET

File Size 675.67K  /  8 Page

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    FQA7N90

FAIRCHILD[Fairchild Semiconductor]
Part No. FQA7N90
OCR Text ...lsed (Note 1) FQA7N90 900 7.4 4.7 29.6 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Rec...
Description 900V N-Channel MOSFET

File Size 672.77K  /  8 Page

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    FQAF7N90

FAIRCHILD[Fairchild Semiconductor]
Part No. FQAF7N90
OCR Text ...tion (TC = 25C) 830 5.2 10.7 4.0 107 0.85 -55 to +150 300 - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC ...
Description 900V N-Channel MOSFET

File Size 678.78K  /  8 Page

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    IRG4PF50WD

IRF[International Rectifier]
Part No. IRG4PF50WD
OCR Text ...ction Temperature C) ( Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SING...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 246.57K  /  10 Page

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    SSH7N90A

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. SSH7N90A
OCR Text ...5-seconds y x x z x Value 900 7 4.4 28 30 778 7 24 1.5 240 1.92 -55 to +150 1. Gate 2. Drain 3. Source Units V A A V mJ A mJ V/ns W W/...900V VDS=720V, TC=125C VGS=10V, ID=3.5A VDS=50V, ID=3.5A VGS=0V, VDS=25V f=1MHz See Fig 5 { { See Fi...
Description N-Channel Power Mosfets

File Size 244.69K  /  8 Page

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    2SK1945-01 2SK1945-01L 2SK1945-01LS

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK1945-01 2SK1945-01L 2SK1945-01LS
OCR Text ...1800 180 60 40 40 130 70 5 20 1,4 3 5 IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C 0,93 400 1,5 Unit V V A mA...900V 2,8 2SK1945-01L,S FAP-IIA Series Drain-Source-On-State Resistance vs. Tch Typical Trans...
Description N-channel MOS-FET

File Size 206.74K  /  2 Page

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    2SK2082-01

FUJI[Fuji Electric]
Part No. 2SK2082-01
OCR Text ... N-channel MOS-FET 900V 1,4 9A 150W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C),...
Description N-channel MOS-FET

File Size 213.41K  /  2 Page

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    2SK2654 2SK2654-01

FUJI[Fuji Electric]
Part No. 2SK2654 2SK2654-01
OCR Text ...ch =25C Min. 900 3,5 Typ. 4,0 10 0,2 10 1,48 5 1200 180 90 30 120 95 60 1,0 1000 12 Max. 4,5 500 1,0 100 2,0 8 Unit V V A mA ...900V 2 2SK2654-01 FAP-IIS Series Drain-Source-On-State Resistance vs. Tch RDS(on) = f(Tch);...
Description N-channel MOS-FET

File Size 280.54K  /  2 Page

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    2SK2655 2SK2655-01R

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK2655 2SK2655-01R
OCR Text ...ch =25C Min. 900 3,5 Typ. 4,0 10 0,2 10 1,48 5 1200 180 90 30 120 95 60 1,0 1000 12 Max. 4,5 500 1,0 100 2,0 8 Unit V V A mA ...900V 2 2SK2655-01R FAP-IIS Series Drain-Source On-State Resistance vs. Tch RDS(on) = f(Tch)...
Description N-channel MOS-FET

File Size 285.72K  /  2 Page

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    FQA11N90

Fairchild Semiconductor
Part No. FQA11N90
OCR Text ...ed (Note 1) FQA11N90 900 11.4 7.2 45.6 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Rec...
Description 900V N-Channel MOSFET

File Size 678.02K  /  8 Page

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