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SGS Thomson Microelectronics
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| Part No. |
STW10NC70Z
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| OCR Text |
...time v dd = 350v, i d =5a r g = 4.7 w v gs = 10v (see test circuit, figure 3) 36 ns t r rise time 12 ns q g total gate charge v dd = 540v, i d =10a, v gs = 10v 80 112 nc q gs gate-source charge 26 nc q gd gate-drain charge 15 nc symbol para... |
| Description |
N-CHANNEL 700V 0.6OHM 10.6A TO-247 ZENER-PROTECTED POWERMESH III MOSFET
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| File Size |
48.65K /
6 Page |
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IXYS
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| Part No. |
DSEI30-12A
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| OCR Text |
...v 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 s t z thjc k/w 0 200 400 600 0 10 20 30 40 50 60 t vj =125 c i f =30a di f /dt t fr v fr t fr...540v t vj =100 c max. typ. i f =15a i f =30a i f =60a i f =30a t vj =100 c v r = 540v v r =540v t ... |
| Description |
Fast Recovery Diodes
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| File Size |
44.21K /
2 Page |
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http://
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| Part No. |
P4KE
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| OCR Text |
...(a) and above 1.0(25.4) min .205(5.21) .166(4.22) .034(0.86) .028(0.71) dia .107(2.72) .080(2.03) 1.0(25.4) min dimensions in inches and (millimeters) do-204al(do-41) dia
?????? yangzhou yangjie electroni c technology co., l... |
| Description |
Transient Voltage Suppressor Diodes
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| File Size |
183.85K /
5 Page |
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IXYS, Corp.
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| Part No. |
IXGH25N100AU1
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| OCR Text |
...ed) min. typ. max. bv ces i c = 4.5 ma, v ge = 0 v 1000 v v ge(th) i c = 500 m a, v ce = v ge 2.5 5.5 v i ces v ce = 0.8 ? v ces t j = 2...540v t j - degrees c 0 40 80 120 160 normalized i rm /q r 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 q r i r... |
| Description |
High speed IGBT with Diode 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
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| File Size |
315.47K /
6 Page |
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it Online |
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