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3mj Datasheet PDF File

For 3mj Found Datasheets File :: 112 Search Time::1.703ms
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Part No.	ATH100KR8
OCR Text	...or: 0.4mw/k heat capacity: 1.3mj/k maximum power @ 25 c: 18mw application drill a hole on the object for which the temperature needs to be measured and use thermall y conductive epoxy to pot the thermistor inside the hole. the...
Description	High Stability Miniature Thermistor
File Size	281.84K / 3 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IKP10N60T IKB10N60T
OCR Text	...0,4m J E off 0,2m J E on * 0,3mj E off 0,2mJ 0,1mJ 0,0mJ E on* 50C 100C 150C 0,0m J 300V 350V 400V 450V 500V 550V TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction...
Description	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode From old datasheet system
File Size	392.39K / 14 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SKW07N12008
OCR Text	... 0a 5a 10a 15a 20a 0mj 1mj 2mj 3mj 4mj 5mj e on * e off e ts * e , switching energy losses 0 ? 20 ? 40 ? 60 ? 80 ? 100 ? 0.0mj 0.5mj 1.0mj 1.5mj 2.0mj 2.5mj e ts * e on * e off i c , collector current r g , gate resistor fi...
Description	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	330.96K / 13 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IKA10N60T
OCR Text	...0,4m J E off 0,2m J E on * 0,3mj E off 0,2mJ 0,1mJ 0,0mJ E on* 50C 100C 150C 0,0m J 300V 350V 400V 450V 500V 550V TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction...
Description	600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode From old datasheet system
File Size	364.19K / 13 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STP2N80 STP2N80FI
OCR Text	... limited by t j max, d < 1%) 3mj i ar avalanche current, repetitive or not-repetitive (t c = 100 o c, pulse width limited by t j max, d < 1%) 1.5 a electrical characteristics (t case = 25 o c unless otherwise specified) off sym...
Description	OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
File Size	385.88K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SKB04N6007
OCR Text	...a 6a 8a 10a 0.0mj 0.1mj 0.2mj 0.3mj 0.4mj 0.5mj 0.6mj e on * e off e ts * e , switching energy losses 0 ? 50 ? 100 ? 150 ? 200 ? 0.0mj 0.1mj 0.2mj 0.3mj 0.4mj e ts * e on * e off i c , collector current r g , gate resistor ...
Description	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	1,147.37K / 13 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IGW08T120
OCR Text	...500v 600v 700v 800v 0mj 1mj 2mj 3mj e ts * e on * *) e on and e ts include losses due to diode recovery e off t j , junction temperature v ce , collector - emitter voltage figure 15. typical switching energy losses as a f...
Description	Low Loss IGBT in TrenchStop and Fieldstop technology
File Size	346.01K / 12 Page	View it Online	Download Datasheet

				http:// International Rectifier, Corp.
Part No.	IR11867-E01NBSP IR11867-E01 11867-E01
OCR Text	... = 16Khz PWM = 0 to 100% ETS= 1.3mj VB+ to GND = 13.5V Vgs = 10V *Note 2. -See page 9 for Kelvin sense locations. Minimum and maximum limits are temporary. They will be defined once full characterization of the power module will be co...
Description	V(in): 40V; generic DOL power module PROVISIONAL SPECIFICATION FOR THE GENERIC DOL POWER MODULE 临时规格为通用劳工部电源模
File Size	244.21K / 10 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SKP06N60 SKB06N60 Q67040-S4230 Q67040-S4231
OCR Text	...E, SWITCHING ENERGY LOSSES 0.3mj 0.2mJ E on * E off 0.1mJ 10 K/W -2 0.01 , (s)= 0.0341 3.74E-3 3.25E-4 R2 single pulse 10 K/W 1s -3 0.0mJ 0C C 1 = 1 / R 1 C 2 = 2 /R 2 50C 100C 150C 10s 100s ...
Description	Fast S-IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	266.40K / 13 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IKB15N60T
OCR Text	...0.7mJ 0.6mJ 0.5mJ 0.4mJ E off 0.3mj E on* 0.2mJ 25C 50C 75C 100C 125C 150C E ts * E, SWITCHING ENERGY LOSSES 1.0m J 0.8m J E ts * 0.6m J E off 0.4m J 0.2m J E on * 0.0m J 300V 350V 400V 450V TJ, JUNCTION TEMPERATURE Figure 15...
Description	600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
File Size	394.61K / 13 Page	View it Online	Download Datasheet

For 3mj Found Datasheets File :: 112 Search Time::1.703ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 |