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				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM48C2100B KM48V2100B KM48C2000B KM48V2000B KM48C2000BSL-5 KM48C2000BSL-7 KM48C2000BSL-6 KM48C2100BSL-5 KM48C2100BSL-6 KM48C2100BSL-7 KM48V2000BSL-5 KM48C2000BKL-5 KM48C2000BKL-6 KM48C2000BKL-7 KM48C2100BKL-5 KM48C2100BKL-6 KM48C2100BKL-7 KM48V2000BKL-5 KM48V2000BKL-6 KM48V2100BKL-5 KM48V2100BKL-6 KM48V2100BKL-7
OCR Text	...5 -6 -7 324 288 252 3.3V 2K 396 360 324 4K 495 440 385 5V U U U 2K U 605 U 550 495 FUNCTIONAL BLOCK DIAGRAM U Refresh Cycles Part NO. C2000B V2000B C2100B V2100B VCC 5V 3.3V 5V 3.3V 2K 32ms Refresh cycle 4K Refresh period...
Description	2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns 2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns 2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 70ns 2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns 2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns 2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns
File Size	79.12K / 8 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL-6 KM48V8104BKL-45 KM48V8104BKL-6
OCR Text	...wer supply 4K 468 432 396 8K 360 324 288 FUNCTIONAL BLOCK DIAGRAM Control Clocks Vcc Vss VBB Generator Refresh Control Refresh Counter Memory Array 8,388,608 x 8 Cells Sense Amps & I/O * Access mode & RAS only refresh mod...
Description	8M x 8bit CMOS dynamic RAM with extended data out, 45ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns 8M x 8bit CMOS dynamic RAM with extended data out, 50ns
File Size	385.67K / 21 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4E640412E-TI45 K4E640412E-TI50 K4E640412E-TI60 K4E640412E-TP45 K4E640412E-TP50 K4E640412E-TP60 K4E660412E-TP60 K4E640412E K4E640412E-JI45 K4E640412E-JI50 K4E640412E-JI60 K4E640412E-JP45 K4E640412E-JP50 K4E640412E-JP60 K4E660412E K4E660412E-JI45 K4E660412E-JI50 K4E660412E-JI60 K4E660412E-JP45 K4E660412E-JP50 K4E660412E-JP60 K4E660412E-TI45 K4E660412E-TI50 K4E660412E-TI60 K4E660412E-TP45 K4E660412E-TP50
OCR Text	...perating ( -40~85C ) 4K 432 396 360 8K 324 288 252 FUNCTIONAL BLOCK DIAGRAM Refresh Control Refresh Counter Memory Array 16,777,216 x 4 Cells Sens e Amps & I/O * Access mode & RAS only refresh mode : 8K cycle/64ms(Normal), 8K...
Description	16M x 4bit CMOS Dynamic RAM with Extended Data Out
File Size	191.44K / 21 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM48V8104C KM48V8004C KM48V8104CK-45 KM48V8104CKL-6 KM48V8104CKL-5 KM48V8104CKL-45 KM48V8004CKL-45 KM48V8004CK-45
OCR Text	....3V0.3V power supply 4K 432 396 360 8K 324 288 252 FUNCTIONAL BLOCK DIAGRAM Control Clocks Vcc Vss VBB Generator Refresh Control Refresh Counter Memory Array 8,388,608 x 8 Cells Sense Amps & I/O * Access mode & RAS only r...
Description	8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 45ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns
File Size	387.62K / 21 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	GM71VS16160CL
OCR Text	... 22 * Low Power Active : 396/360/324mW (MAX) Standby : 7.2mW (CMOS level : MAX) 0.54mW (L-version : MAX) * RAS Only Refresh, CAS before RAS Refresh, Hidden Refresh Capability * All inputs and outputs TTL Compatible *4096 Refresh Cycles/6...
Description	(GM71VS16160CL / GM71V16160C) 1M x 16-Bit CMOS DRAM
File Size	131.34K / 10 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	GM71VS16163CL
OCR Text	... 29 * Low Power Active : 396/360/324/288mW (MAX) Standby : 7.2mW (MAX) 0.83mW (L-series : MAX) * RAS Only Refresh, CAS before RAS Refresh, Hidden Refresh Capability * All inputs and outputs TTL Compatible * 4096 Refresh Cycles/64ms * 409...
Description	(GM71VS16163CL / GM71V16163C) 1M x 16-Bit CMOS DRAM
File Size	152.11K / 13 Page	View it Online	Download Datasheet

For 360 396-output Found Datasheets File :: 268 Search Time::1.953ms
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