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  3.900v Datasheet PDF File

For 3.900v Found Datasheets File :: 1835    Search Time::2.984ms    
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    FQA7N90M

Fairchild Semiconductor
Part No. FQA7N90M
OCR Text ...Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) 780 6...
Description 900V N-Channel MOSFET

File Size 675.67K  /  8 Page

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    FQA7N90

FAIRCHILD[Fairchild Semiconductor]
Part No. FQA7N90
OCR Text ...Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) 830 7...
Description 900V N-Channel MOSFET

File Size 672.77K  /  8 Page

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    FQAF7N90

FAIRCHILD[Fairchild Semiconductor]
Part No. FQAF7N90
OCR Text ...d (Note 1) FQAF7N90 900 5.2 3.3 20.8 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recov...
Description 900V N-Channel MOSFET

File Size 678.78K  /  8 Page

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    IRG4PF50WD

IRF[International Rectifier]
Part No. IRG4PF50WD
OCR Text ...Current Min. 900 -- -- -- -- 3.0 -- 26 -- -- -- -- -- -- Typ. -- 0.295 2.25 2.74 2.12 -- -13 39 -- -- -- 2.5 2.1 -- Max. Units Cond...900V 2.0 VGE = 0V, VCE = 10V, TJ = 25C 6.5 mA VGE = 0V, VCE = 900V, TJ = 150C 3.5 V IC = 16A See Fig...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 246.57K  /  10 Page

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    SSH7N90A

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. SSH7N90A
OCR Text ...ower RDS(ON): 1.247 (Typ.) 1 2 3 RDS(ON) = 1.8 ID = 7A TO-3P ABSOLUTE MAXIMUM RATINGS Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD...900V VDS=720V, TC=125C VGS=10V, ID=3.5A VDS=50V, ID=3.5A VGS=0V, VDS=25V f=1MHz See Fig 5 { { See Fi...
Description N-Channel Power Mosfets

File Size 244.69K  /  8 Page

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    2SK1945-01 2SK1945-01L 2SK1945-01LS

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK1945-01 2SK1945-01L 2SK1945-01LS
OCR Text ... = 100H Min. 900 2,5 Typ. 3,0 10 0,2 10 2,0 6 1200 120 40 25 25 85 45 Max. 3,5 500 1,0 100 2,8 1800 180 60 40 40 130 70 5 20 1,4 ...900V 2,8 2SK1945-01L,S FAP-IIA Series Drain-Source-On-State Resistance vs. Tch Typical Trans...
Description N-channel MOS-FET

File Size 206.74K  /  2 Page

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    2SK2082-01

FUJI[Fuji Electric]
Part No. 2SK2082-01
OCR Text ... = 100H Min. 900 2,5 Typ. 3,0 10 0,2 10 1,1 10 2200 210 65 25 60 140 70 Max. 3,5 500 1,0 100 1,4 3300 320 100 40 90 210 110 9 36 1,...900V 1,4 2SK2082-01 FAP-IIA Series Drain-Source-On-State Resistance vs. Tch Typical Transfer...
Description N-channel MOS-FET

File Size 213.41K  /  2 Page

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    2SK2654 2SK2654-01

FUJI[Fuji Electric]
Part No. 2SK2654 2SK2654-01
OCR Text ...dt=100A/s T ch =25C Min. 900 3,5 Typ. 4,0 10 0,2 10 1,48 5 1200 180 90 30 120 95 60 1,0 1000 12 Max. 4,5 500 1,0 100 2,0 8 Un...900V 2 2SK2654-01 FAP-IIS Series Drain-Source-On-State Resistance vs. Tch RDS(on) = f(Tch);...
Description N-channel MOS-FET

File Size 280.54K  /  2 Page

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    2SK2655 2SK2655-01R

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK2655 2SK2655-01R
OCR Text ...dt=100A/s T ch =25C Min. 900 3,5 Typ. 4,0 10 0,2 10 1,48 5 1200 180 90 30 120 95 60 1,0 1000 12 Max. 4,5 500 1,0 100 2,0 8 Un...900V 2 2SK2655-01R FAP-IIS Series Drain-Source On-State Resistance vs. Tch RDS(on) = f(Tch)...
Description N-channel MOS-FET

File Size 285.72K  /  2 Page

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    FQA11N90

Fairchild Semiconductor
Part No. FQA11N90
OCR Text ...Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) 1000 ...
Description 900V N-Channel MOSFET

File Size 678.02K  /  8 Page

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