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SamHop Microelectronics...
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| Part No. |
STUD458S
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| OCR Text |
...tance, junction-to-ambient r ja 3 c/w thermal resistance, junction-to-case r jc t c =70 c a e as mj single pulse avalanche energy d t c =70...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
107.30K /
8 Page |
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SamHop Microelectronics...
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| Part No. |
STM6716
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| OCR Text |
...p.com.tw 2 v sd nc q gs nc q gd 3.4 7.4 gate-drain charge gate-source charge diode forward voltage v ds =30v,i d =5a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =5a 0.77 1.3 v v ds =30v,i d =5a,v gs =10v 1... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
115.26K /
8 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STUD10N20
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| OCR Text |
...ratings v gs =0v,i s =4a 0.81 1.3 v notes v ds =100v,i d =1a,v gs =10v 12 3 11 328 mohm v gs =4.5v , i d =3.9a 430 nc 7.7 v ds =100v,i d =1a,v gs =4.5v a.pulse test:pulse width < 10us, duty cycle < 1%. b.guaranteed by design, not subject to... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
118.12K /
10 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STB31L01
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| OCR Text |
...12 2 v sd nc q gs nc q gd 2.6 9.3 gate-drain charge gate-source charge diode forward voltage v ds =50v,i d =13a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =4a 0.79 1.3 v notes v ds =50v,i d =13a,v gs =10v... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
132.21K /
7 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STUD1855PL
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| OCR Text |
...tance, junction-to-ambient r jc 3 50 r ja /w c /w c ab s ol ute maximum r ating s (t a =25 c unless otherwise noted) 1 drain-s ource voltage...6ohm ns ns ns ns total g ate c harge g ate-s ource c harge gate-drain charge q g q gs q gd v ds =-30... |
| Description |
S uper high dense cell design for low R DS (ON).
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| File Size |
103.78K /
8 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STD12L01A
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| OCR Text |
...mhop.com.tw oct,15,2010 2 1 1.8 3 g fs s c iss 700 pf c oss 48 pf c rss 31 pf q g 13 nc 11.5 23 10 t d(on) 11.5 ns t r ns t d(off) ns t f ns...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =10v , i d =6... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
87.36K /
7 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STD12L01
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| OCR Text |
...nt-continuous -pulsed b a ver 1.3 www.samhop.com.tw oct,29,2010 1 details are subject to change without notice. t c =25 c g g s s d d s t d...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
88.78K /
7 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STUD1955NL
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| OCR Text |
...tance, junction-to-ambient r jc 3 50 r ja /w c /w c absolute maximum ratings (t a =25 c unless otherwise noted) drain-s ource voltage r atin...6ohm ns ns ns ns total g ate c harge g ate-s ource c harge gate-drain charge q g q gs q gd v ds =15v... |
| Description |
S uper high dense cell design for low R DS (ON).
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| File Size |
100.70K /
8 Page |
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it Online |
Download Datasheet |
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