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				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics] Hi-Sincerity Mocroelectroni...
Part No.	HE8050S
OCR Text	...ed Date : 2001.07.18 Page No. : 3/4 PD-Ta 700 600 Power Dissipation-PD(mW) 500 400 300 200 100 0 0 20 40 60 80 100 o 120 14...TO-92 Dimension A B 12 3 Spec. No. : HE6110 Issued Date : 1992.09.30 Revised Date : 2001.07.18 ...
Description	NPN EPITAXIAL PLANAR TRANSISTOR
File Size	37.94K / 4 Page	View it Online	Download Datasheet

				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics]
Part No.	HE8050
OCR Text	3 HE8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050 is designed for use in 2W output amplifier of portable radios in cla...to Base Voltage .......................................................................................
Description	NPN EPITAXIAL PLANAR TRANSISTOR
File Size	35.35K / 3 Page	View it Online	Download Datasheet

				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics]
Part No.	HPN2907A PN2907A
OCR Text	...5 180 Max. -10 -50 -0.4 -1.6 -1.3 -2.6 300 8 Unit V V V nA nA V V V V Test Conditions IC=-10uA, IE=0 IC=-10mA, IB=0 IC=-10uA, IC=0 VCB=-50V,...TO-92 Dimension A B 1 2 3 Date Code Spec. No. : HE6105 Issued Date : 1992.09.09 Revised Date :...
Description	PNP EPITAXIAL PLANAR TRANSISTOR
File Size	36.46K / 4 Page	View it Online	Download Datasheet

				IDT[Integrated Device Technology]
Part No.	IDT71V632SA4PF IDT71V632SA4PFI IDT71V632 IDT71V632S5PFI IDT71V632S5PF IDT71V632S6PF IDT71V632S6PF8 IDT71V632S6PFG IDT71V632S6PFG8 IDT71V632S6PFI IDT71V632S6PFI8 IDT71V632S5PF8 IDT71V632S5PFG IDT71V632S5PFG8 IDT71V632S5PFI8 IDT71V632S7PF IDT71V632S7PF8 IDT71V632S7PFG IDT71V632S7PFI IDT71V632S7PFI8 IDT71V632S8PF IDT71V632S8PF8
OCR Text	3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect Features x x IDT71V632 x x x x x x 64K x 32 mem...to 117MHz. The IDT71V632 SRAM contains write, data, address, and control registers. Internal logic a...
Description	64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter/ Single Cycle Deselect 3.3V 64K x 32 Pipelined 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter Single Cycle Deselect
File Size	271.54K / 19 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1010E
OCR Text	...Units C/W www.irf.com 1 3/16/01 IRF1010E Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/...to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance...
Description	Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?
File Size	143.91K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010N
OCR Text	...x. 85 60 290 180 1.2 20 43 18 3.6 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambien...
Description	Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)
File Size	154.40K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010Z IRF1010ZL IRF1010ZS
OCR Text	...-- --- --- --- 22 15 75 A 360 1.3 33 23 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS =...to-Source Current (A) 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1000 TOP ID, Drain-to-Sou...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET
File Size	298.51K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1104
OCR Text	... = 20V --- ID = 60A ns --- RG = 3.6 --- RD = 0.33, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die cont...to Design Tip # 93-4 Starting TJ = 25C, L = 194H RG = 25, IAS = 60A. (See Figure 12) ISD 6...
Description	Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?? Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?
File Size	97.26K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1310N
OCR Text	... = 50V --- ID = 22A ns --- RG = 3.6 --- RD = 2.9, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die conta...to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A) Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
File Size	92.91K / 8 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	...ion 1997 File Number 2208.3 5-1 IRF234, IRF235, IRF236, IRF237 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF234 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate ...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

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