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2140 Datasheet PDF File

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				Infineon Technologies AG
Part No.	PTFA212001E PTFA212001F
OCR Text	...d = 30 v, i dq = 1600 ma, ? = 2140 mhz, 3gpp wcdma signal, p/a r = 8 db, 10 mhz carrier spacing -53 -48 -43 -38 -33 -28 -23 34 36 38 40 42 44 46 48 average output power (dbm) im3 (dbc), acpr (dbc) 0 5 10 15 20 25 30 drain efficiency (%) ...
Description	Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 ?2170 MHz
File Size	393.98K / 11 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTFA211801E PTFA211801E11
OCR Text	...wo-carrier wcdma performance at 2140 mhz, 28 v - average output power = 45.5 dbm - linear gain = 15.5 db - effciency = 27.5% - intermodulation distortion = C36 dbc - adjacent channel power = C41 dbc ? typical cw performance, 2170...
Description	Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz
File Size	413.06K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTFA211001E
OCR Text	...dd = 28 v, i dq = 900 ma, ? = 2140 mhz, 3gpp wcdma signal, 8 db p/a r, 10 mhz carrier spacing -55 -52 -49 -46 -43 -40 -37 -34 -31 -28 36 38 40 42 44 46 average output power (dbm) im3 (dbc), acpr (dbc) 0 4 8 12 16 20 24 28 32 36 drain eff...
Description	Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz
File Size	215.46K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTFA210301E
OCR Text	...wo-carrier wcdma performance at 2140 mhz, 28 v - average output power = 33 dbm - linear gain = 16.5 db - intermodulation distortion = ?50 dbc - adjacent channel power = ?52 dbc ? typical cw performance, 2170 mhz, 28 v - output power at p?1d...
Description	Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz
File Size	190.69K / 9 Page	View it Online	Download Datasheet

				Mimix Broadband, Inc.
Part No.	PB-CGB7389-SC-0000 CGB7389-SC0607
OCR Text	...t ip3 @ 2450 mhz 14.6 db gain @ 2140 mhz 13.2 db gain @ 2450 mhz 24.3 dbm p1db @ 2450 mhz low performance variation over temperature low cost: sot-89 package 100% dc on-wafer testing esd protection on all die: >2000v hbm low thermal resista...
Description	2.1-2.5 GHz InGaP HBT Matched Gain Block Amplifier
File Size	265.37K / 15 Page	View it Online	Download Datasheet

				Mimix Broadband, Inc.
Part No.	CGB7389-BD
OCR Text	...t ip3 @ 2450 mhz 14.6 db gain @ 2140 mhz 13.2 db gain @ 2450 mhz 24.3 dbm p1db @ 2450 mhz low performance variation over temperature low cost: sot-89 package 100% dc on-wafer testing esd protection on all die: >2000v hbm low thermal resista...
Description	2.1-2.5 GHz InGaP HBT Matched Gain Block Amplifier
File Size	264.75K / 15 Page	View it Online	Download Datasheet

				Mimix Broadband, Inc.
Part No.	CGB7289-SC-0G0T CGB7289-SC-0G00 CGB7289-SP-0G00 CGB7289-SP-0G0T CGB7289-BD PB-CGB7289-SC-0000
OCR Text	... features 41.0 dbm output ip3 @ 2140 mhz 21.0 db gain @ 900 mhz 13.3 db gain @ 2140 mhz 23.7 dbm p1db @ 2140 mhz low performance variation over temperature low cost: sot-89 package 100% dc on-wafer testing esd protection on all die: >2000v ...
Description	DC-2.5 GHz InGaP HBT Matched Gain Block Amplifier
File Size	345.29K / 19 Page	View it Online	Download Datasheet

				TriQuint Semiconductor
Part No.	AH322
OCR Text	... output ip3 ? 13.4 db gain @ 2140 mhz ? 500 ma quiescent current ? +5 v single supply ? mttf > 100 years ? lead-free/rohs-compliant soic-8 package applications ? final stage amplifiers for repeaters ? high power am...
Description	2W High Linearity InGaP HBT Amplifier
File Size	478.34K / 8 Page	View it Online	Download Datasheet

				Mini-Circuits http://
Part No.	KSN-2300A-119
OCR Text	...1 43.45 44.70 18.57 19.21 20.68 2140.0 4.52 4.51 4.32 41.87 43.59 44.82 18.57 19.22 20.68 2160.0 4.53 4.52 4.30 42.03 43.74 44.94 18.58 19.23 20.69 2180.0 4.59 4.56 4.36 42.19 43.88 45.08 18.59 19.24 20.70 2200.0 4.57 4.55 4.35 42.35 44.03 ...
Description	Frequency Synthesizer PHASE LOCKED LOOP, MQCC14
File Size	750.48K / 11 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF5S21045NBR1 MRF5S21045NR1 MRF5S21045NR109
OCR Text	...of handling 5:1 vswr, @ 28 vdc, 2140 mhz, 45 watts cw output power features ? characterized with series equivalent large-signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ? ...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	620.42K / 16 Page	View it Online	Download Datasheet

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