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  20a 200v Datasheet PDF File

For 20a 200v Found Datasheets File :: 1130    Search Time::1.828ms    
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    FGA70N33BTD FGA70N33BTDTU

Fairchild Semiconductor
Part No. FGA70N33BTD FGA70N33BTDTU
OCR Text ...ltage IC = 250A, VCE = VGE IC = 20a, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V, IC = 70A, VGE = 15V, TC...200v, IC = 20a, VGE = 15V VCC = 200v, IC = 20a, RG = 5, VGE = 15V, Resistive Load, TC = 125oC VCC = ...
Description 330V, 70A PDP IGBT

File Size 747.29K  /  9 Page

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    Shenzhen Winsemi Microelectronics Co., Ltd
Part No. WSAD92-02
OCR Text ... a l l ri g h t r e s er v ed . 20a,200v 20a,200v 20a,200v 20a,200v ultrafast ultrafast ultrafast ultrafast dual dual dual dual diode diode diode diode features features features features ultrafast recovery time low for w a r d voltage dr...
Description 20a,200v Ultrafast Dual Diode

File Size 322.39K  /  5 Page

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    SGH20N120RUFD SGH20N120RUFDTU

FAIRCHILD[Fairchild Semiconductor]
Part No. SGH20N120RUFD SGH20N120RUFDTU
OCR Text ...ltage : VCE(sat) = 2.3 V @ IC = 20a High input impedance CO-PAK, IGBT with FRD : trr = 80ns (typ.) Applications AC & DC motor controls, ...200v 10 15 20 25 30 35 40 0 20 40 60 80 100 Collector Curr...
Description Discrete, Short Circuit Rated IGBT with Diode

File Size 558.46K  /  8 Page

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    FGPF45N45T

Fairchild Semiconductor
Part No. FGPF45N45T
OCR Text ...ltage IC = 250A, VCE = VGE IC = 20a, VGE = 15V IC = 45A, VGE = 15V IC = 45A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres In...200v, IC = 45A, VGE = 15V VCC = 200v, IC = 45A, RG = 10, VGE = 15V, Resistive Load, TC = 125oC VCC =...
Description 450V, 45A PDP Trench IGBT

File Size 563.79K  /  7 Page

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    FGPF4633

Fairchild Semiconductor
Part No. FGPF4633
OCR Text ...ltage IC = 250A, VCE = VGE IC = 20a, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V IC = 70A, VGE = 15V, TC ...200v, IC = 20a VGE = 15V VCC = 200v, IC = 20a, RG = 5, VGE = 15V, Resistive Load, TC = 125oC VCC = 2...
Description 330V PDP IGBT

File Size 645.07K  /  8 Page

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    FS20SM-12

Powerex, Inc.
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
Part No. FS20SM-12
OCR Text ...................................20a TO-3P APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FD...200v, ID = 10A, VGS = 10V, RGEN = RGS = 50 IS = 10A, VGS = 0V Channel to case PERFORMANCE CURV...
Description 20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 20 A, 600 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET
Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 46.51K  /  4 Page

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    SGH40N60UFDTU

Fairchild Semiconductor
Part No. SGH40N60UFDTU
OCR Text ...e : v ce(sat) = 2.1 v @ i c = 20a ? high input impedance ? co-pak, igbt with frd : t rr = 42ns (typ.) absolute maximum ratings t c...200v i f = 15a t c = 25 t c = 100 reverce recovery time, t rr [ns] di/dt [a/us] 100...
Description Ultra-Fast IGBT

File Size 621.73K  /  8 Page

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    STP40N20FP STW40N20 STB40N20

STMicroelectronics
Part No. STP40N20FP STW40N20 STB40N20
OCR Text ... resistance v gs = 10v, i d = 20a 0.038 0.045 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. forward transconductance v ds = 15v, i d = 20a 30 s c ...
Description N-channel 200v - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET
   N-channel 200v - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET

File Size 484.48K  /  18 Page

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    HFA80NK40C

International Rectifier
Part No. HFA80NK40C
OCR Text ...) rr i = 100a i = 40a i = 20a v = 200v t = 125 c t = 25c r j j f f f 1 10 100 100 1000 f di /dt - (a/ s) i - (a) irrm i =100a i = 40a i = 20a v = 200v t = 125 c t = 25c r j j f f f 100 1000 10000 100 1000 f di /d...
Description 400V 80A HEXFRED Common Cathode Diode in a TO-249AA Non-Isolated package

File Size 278.29K  /  5 Page

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    IRG4PH40UD2

International Rectifier
IRF
Part No. IRG4PH40UD2
OCR Text ... typ. = 1.72V @VGE = 15V, IC = 20a n-channel Benefits Higher switching frequency capability than competitive IGBTs Highest effic...200v, IF = 10A, di/dt = 200A/s TJ=125C, VCC = 200v, IF = 10A, di/dt = 200A/s ns J ns J n...
Description 600V Copack IGBT in a TO-3P (TO-247AC) package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 245.14K  /  10 Page

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For 20a 200v Found Datasheets File :: 1130    Search Time::1.828ms    
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